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<p>Sm-doped BiFeO<sub>3</sub> (Bi<sub>1-x</sub>Sm<sub>x</sub>FeO₃, x = 0.05 and 0.1) were fabricated using the sol-gel approach to systematically investigate the influence of rare earth substitution on structural distortion, optical, thermal, microstructural, dielectrical relaxation, and electrical properties. X-ray diffraction (XRD) analysis confirms the formation of the R3c phase and reveals a reduction in the lattice volume as the Sm concentration increases from 5% to 10%. Raman spectroscopy further validates the phase structure and indicates structural distortion when transitioning from Bi<sub>0.95</sub>Sm<sub>0.05</sub>FeO<sub>3</sub> to Bi<sub>0.9</sub>Sm<sub>0.1</sub>FeO<sub>3</sub>. Field emission scanning electron microscopy (FESEM) analysis verifies the polycrystalline structure of the synthesized samples and shows a reduction in average grain size from 238&#xa0;nm to 226&#xa0;nm as the Sm doping level increases. Impedance, dielectric, and AC conductivity measurements exhibit dielectric dispersion, relaxation mechanisms, and non-Debye conduction behavior in both materials. The dielectric constant decreases with higher Sm doping. NTCR behaviour with CBH type of conduction is observed in both materials. The UV-visible spectroscopy shows an increase in the band gap from 2.37&#xa0;eV for Bi<sub>0.95</sub>Sm<sub>0.05</sub>FeO<sub>3</sub> to 2.63&#xa0;eV for Bi<sub>0.9</sub>Sm<sub>0.1</sub>FeO<sub>3</sub>. The present research establishes a clear correlation between structural refinement, defect chemistry and dielectric relaxation dynamics, and band gap engineering. These results show that controlled substitution of Sm is an efficient approach to engineer multifunctional properties of the BiFeO3 for more sophisticated dielectric applications, optoelectronics and energy related applications.</p>

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Structural, electrical, and optical characterization of Sm-Doped BiFeO3 ceramics synthesized via sol-gel method

  • 期刊论文

  • 发表日期：

    2026年4月23日

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  • Sushil Joshi,
  • Alok Shukla

摘要

Sm-doped BiFeO3 (Bi1-xSmxFeO₃, x = 0.05 and 0.1) were fabricated using the sol-gel approach to systematically investigate the influence of rare earth substitution on structural distortion, optical, thermal, microstructural, dielectrical relaxation, and electrical properties. X-ray diffraction (XRD) analysis confirms the formation of the R3c phase and reveals a reduction in the lattice volume as the Sm concentration increases from 5% to 10%. Raman spectroscopy further validates the phase structure and indicates structural distortion when transitioning from Bi0.95Sm0.05FeO3 to Bi0.9Sm0.1FeO3. Field emission scanning electron microscopy (FESEM) analysis verifies the polycrystalline structure of the synthesized samples and shows a reduction in average grain size from 238 nm to 226 nm as the Sm doping level increases. Impedance, dielectric, and AC conductivity measurements exhibit dielectric dispersion, relaxation mechanisms, and non-Debye conduction behavior in both materials. The dielectric constant decreases with higher Sm doping. NTCR behaviour with CBH type of conduction is observed in both materials. The UV-visible spectroscopy shows an increase in the band gap from 2.37 eV for Bi0.95Sm0.05FeO3 to 2.63 eV for Bi0.9Sm0.1FeO3. The present research establishes a clear correlation between structural refinement, defect chemistry and dielectric relaxation dynamics, and band gap engineering. These results show that controlled substitution of Sm is an efficient approach to engineer multifunctional properties of the BiFeO3 for more sophisticated dielectric applications, optoelectronics and energy related applications.