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<p>This article presents a comprehensive study on the impact of both intrinsic and extrinsic parameters on the ON- and OFF-state performance of <InlineEquation ID="IEq15"> <EquationSource Format="TEX">\(\beta\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-(Al<InlineEquation ID="IEq16"> <EquationSource Format="TEX">\(_{x}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mi>x</mi> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>Ga<InlineEquation ID="IEq17"> <EquationSource Format="TEX">\(_{1-x}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow> <mn>1</mn> <mo>-</mo> <mi>x</mi> </mrow> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>)<InlineEquation ID="IEq18"> <EquationSource Format="TEX">\(_{2}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq19"> <EquationSource Format="TEX">\(_{3}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>/Ga<InlineEquation ID="IEq20"> <EquationSource Format="TEX">\(_{2}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq21"> <EquationSource Format="TEX">\(_{3}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation> modulation-doped field-effect transistors (MODFETs), using a meticulously calibrated TCAD framework tailored for power switching applications. Intrinsic parameters such as barrier layer thickness, delta-doping concentration and gate-to-drain spacing, alongside extrinsic factors including surface passivation, gate-connected and source-connected field plates are systematically investigated for their impact on device behavior. Particular emphasis is placed on understanding and optimizing the trade-off between ON-resistance and breakdown voltage. Through careful parameter tuning, we demonstrate the design of a MODFET with both high OFF-state breakdown voltage and low ON-resistance, leading to a substantial enhancement in the power figure of merit (PFOM). A maximum PFOM of 30.6 MW/cm<InlineEquation ID="IEq22"> <EquationSource Format="TEX">\(^{2}\)</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow /> <mn>2</mn> </mmultiscripts> </math></EquationSource> </InlineEquation> is achieved, representing a fourfold improvement over a comparable device without a gate-connected field plate. Furthermore, considering recent progress in material growth and fabrication technologies, an additional improvement of nearly eightfold in PFOM is projected. This study provides physical insight into device operation and offers a valuable framework for the future development of high-performance MODFETs for high-power switching applications.</p>

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TCAD-driven optimization of power performance in \(\beta\)-(Al\(_{x}\)Ga\(_{1-x}\))\(_{2}\)O\(_{3}\)/Ga\(_{2}\)O\(_{3}\) MODFETs via parameter tuning

  • 期刊论文

  • 发表日期：

    2026年5月21日

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  • Ashvinee Deo Meshram,
  • Anumita Sengupta,
  • Gourab Dutta

摘要

This article presents a comprehensive study on the impact of both intrinsic and extrinsic parameters on the ON- and OFF-state performance of \(\beta\) β -(Al \(_{x}\) x Ga \(_{1-x}\) 1 - x ) \(_{2}\) 2 O \(_{3}\) 3 /Ga \(_{2}\) 2 O \(_{3}\) 3 modulation-doped field-effect transistors (MODFETs), using a meticulously calibrated TCAD framework tailored for power switching applications. Intrinsic parameters such as barrier layer thickness, delta-doping concentration and gate-to-drain spacing, alongside extrinsic factors including surface passivation, gate-connected and source-connected field plates are systematically investigated for their impact on device behavior. Particular emphasis is placed on understanding and optimizing the trade-off between ON-resistance and breakdown voltage. Through careful parameter tuning, we demonstrate the design of a MODFET with both high OFF-state breakdown voltage and low ON-resistance, leading to a substantial enhancement in the power figure of merit (PFOM). A maximum PFOM of 30.6 MW/cm \(^{2}\) 2 is achieved, representing a fourfold improvement over a comparable device without a gate-connected field plate. Furthermore, considering recent progress in material growth and fabrication technologies, an additional improvement of nearly eightfold in PFOM is projected. This study provides physical insight into device operation and offers a valuable framework for the future development of high-performance MODFETs for high-power switching applications.