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<p>In this paper a new stochastic simulation algorithm for modeling exciton transport taking into account drift, diffusion and recombination is developed. The method is meshless, and the transport problem is solved by modeling exciton trajectories that are driven by the transient drift-diffusion-recombination equations. The motion of excitons is described probabilistically. All probability distributions (survival probabilities, probabilities of transition from one state to another, probability density distributions of the first passage time, etc.) are derived from Green’s functions subject to appropriate boundary conditions. We present the results of numerical simulations to evaluate the impact of semiconductor doping by quantum dots on the electronic properties of the material.</p>

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Stochastic modeling of exciton transport and recombination processes in semiconductor heterostructures doped with quantum dots

  • 期刊论文

  • 发表日期：

    2026年5月11日

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  • Karl K. Sabelfeld,
  • Ivan A. Aksyuk

摘要

In this paper a new stochastic simulation algorithm for modeling exciton transport taking into account drift, diffusion and recombination is developed. The method is meshless, and the transport problem is solved by modeling exciton trajectories that are driven by the transient drift-diffusion-recombination equations. The motion of excitons is described probabilistically. All probability distributions (survival probabilities, probabilities of transition from one state to another, probability density distributions of the first passage time, etc.) are derived from Green’s functions subject to appropriate boundary conditions. We present the results of numerical simulations to evaluate the impact of semiconductor doping by quantum dots on the electronic properties of the material.