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<p>In this work, we have designed a split oxide heterojunction double-gate tunnel field effect transistor (SOHJDG TFET) using the Sentaurus TCAD simulator. The splitting of the gate dielectric leads to reduced power consumption, and the presence of the heterojunction improves the tunnelling rate. The effect of heavy ion strike on the device characteristics is an important consideration for applications in space. Therefore, we examine the effect of heavy ion strikes at different locations including the source, source/channel junction, channel, channel/drain junction, and drain regions for the SOHJDG TFET. We further investigate the impact of the heavy ion incidence angle (Φ) = 0°, 30°, 45°, 60°, 90° on the transient behaviour in the SOHJDG TFET. The energy deposited by heavy ions is another significant parameter for space applications. Therefore, the effect of linear energy transfer (LET) on electrical parameters is further analysed for the SOHJDG TFET. Maximum transient drain current of 22,000 µA is obtained when the strike is considered in the channel region at an incidence angle of 90° with LET = 20&#xa0;MeV&#xa0;cm<sup>2</sup>/mg.</p>

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Analysis of the effect of heavy ion radiation on the transient behaviour for split oxide heterojunction double gate tunnel FETs

  • 期刊论文

  • 发表日期：

    2026年4月27日

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  • Angothu Saida,
  • Dipjyoti Das,
  • Rajesh Saha

摘要

In this work, we have designed a split oxide heterojunction double-gate tunnel field effect transistor (SOHJDG TFET) using the Sentaurus TCAD simulator. The splitting of the gate dielectric leads to reduced power consumption, and the presence of the heterojunction improves the tunnelling rate. The effect of heavy ion strike on the device characteristics is an important consideration for applications in space. Therefore, we examine the effect of heavy ion strikes at different locations including the source, source/channel junction, channel, channel/drain junction, and drain regions for the SOHJDG TFET. We further investigate the impact of the heavy ion incidence angle (Φ) = 0°, 30°, 45°, 60°, 90° on the transient behaviour in the SOHJDG TFET. The energy deposited by heavy ions is another significant parameter for space applications. Therefore, the effect of linear energy transfer (LET) on electrical parameters is further analysed for the SOHJDG TFET. Maximum transient drain current of 22,000 µA is obtained when the strike is considered in the channel region at an incidence angle of 90° with LET = 20 MeV cm2/mg.