<p>This paper investigates the role of gate oxide materials in enhancing the performance of heterojunction dual-gate vertical tunnel field-effect transistors (HJ-DG-VTFETs), with a particular focus on their application in gas-sensing applications. Using advanced TCAD simulations, various high-κ dielectrics, including HfO₂, Al₂O₃, Si₃N₄, and SiO₂, were analyzed to evaluate their impact on key electrical parameters, including the I<sub>on</sub>/I<sub>off</sub> ratio, threshold voltage, subthreshold swing, and transconductance. Among these, HfO₂ demonstrated the most effective gate control and switching behavior due to its high dielectric constant. Building on this optimized structure, the device's sensitivity to nitrogen dioxide (NO₂) was assessed by employing different gate metals (silver and molybdenum), chosen for their distinct work functions and catalytic properties. Simulated exposure to NO₂ revealed significant shifts in the device's threshold voltage and drain current, confirming its responsiveness to surface potential changes induced by gas adsorption.</p>

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Impact of oxide layer engineering on HJ-DG-VTFET performance and its application in gas sensing

  • Rani Pradhan,
  • Abhyarthana Bisoyi,
  • Aruna Tripathy

摘要

This paper investigates the role of gate oxide materials in enhancing the performance of heterojunction dual-gate vertical tunnel field-effect transistors (HJ-DG-VTFETs), with a particular focus on their application in gas-sensing applications. Using advanced TCAD simulations, various high-κ dielectrics, including HfO₂, Al₂O₃, Si₃N₄, and SiO₂, were analyzed to evaluate their impact on key electrical parameters, including the Ion/Ioff ratio, threshold voltage, subthreshold swing, and transconductance. Among these, HfO₂ demonstrated the most effective gate control and switching behavior due to its high dielectric constant. Building on this optimized structure, the device's sensitivity to nitrogen dioxide (NO₂) was assessed by employing different gate metals (silver and molybdenum), chosen for their distinct work functions and catalytic properties. Simulated exposure to NO₂ revealed significant shifts in the device's threshold voltage and drain current, confirming its responsiveness to surface potential changes induced by gas adsorption.