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<p>Plasmonic metal–insulator–metal (MIM) waveguides enable deep-subwavelength confinement for photonic interconnects, yet CMOS-compatible materials must be benchmarked with dispersion. Titanium nitride (TiN) and indium tin oxide (ITO) enable gold-free operation in the&#xa0;visible and telecom bands. A controlled benchmark that links ellipsometry-derived permittivities of TiN and ITO to corresponding MIM device metrics remains scarce. This study benchmarks TiN and ITO MIM waveguides and an ITO MOS modulator on silicon. TiN and ITO films were sputtered, permittivities were fitted from ellipsometry, and FDTD extracted modes and attenuation; transmission was measured at 780 and 1550&#xa0;nm, and DC bias up to 5&#xa0;V was applied. TiN guidance at 780&#xa0;nm is demonstrated; an effective mode area of 0.05&#xa0;µm<sup>2</sup> was obtained with 1.0&#xa0;dB/µm loss and 4.5&#xa0;µm propagation length, and ITO guidance at 1550 nm is demonstrated with 0.2&#xa0;dB/µm loss and 20&#xa0;µm propagation length. Electro-absorption modulation is demonstrated; transmission was reduced to 40% at 5&#xa0;V over 200&#xa0;µm, which confirms strong carrier-driven absorption in ITO. The results support wavelength-selective use of TiN for passive visible plasmonics and ITO for active near-IR functions in CMOS flows.&#xa0;Future research&#xa0;will focus on phase-dominant tuning using coupled electrostatic–electromagnetic modelling and engineered accumulation profiles.</p>

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Energy efficiency in CMOS-compatible TiN MIM plasmonic waveguides quantified by ellipsometry-calibrated FDTD

  • 期刊论文

  • 发表日期：

    2026年2月27日

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  • Chongkol Sungoum,
  • Ratchagaraja Dhairiyasamy,
  • N. Karthikeyan,
  • Xianpeng Wang,
  • Deekshant Varshney,
  • Subhav Singh

摘要

Plasmonic metal–insulator–metal (MIM) waveguides enable deep-subwavelength confinement for photonic interconnects, yet CMOS-compatible materials must be benchmarked with dispersion. Titanium nitride (TiN) and indium tin oxide (ITO) enable gold-free operation in the visible and telecom bands. A controlled benchmark that links ellipsometry-derived permittivities of TiN and ITO to corresponding MIM device metrics remains scarce. This study benchmarks TiN and ITO MIM waveguides and an ITO MOS modulator on silicon. TiN and ITO films were sputtered, permittivities were fitted from ellipsometry, and FDTD extracted modes and attenuation; transmission was measured at 780 and 1550 nm, and DC bias up to 5 V was applied. TiN guidance at 780 nm is demonstrated; an effective mode area of 0.05 µm2 was obtained with 1.0 dB/µm loss and 4.5 µm propagation length, and ITO guidance at 1550 nm is demonstrated with 0.2 dB/µm loss and 20 µm propagation length. Electro-absorption modulation is demonstrated; transmission was reduced to 40% at 5 V over 200 µm, which confirms strong carrier-driven absorption in ITO. The results support wavelength-selective use of TiN for passive visible plasmonics and ITO for active near-IR functions in CMOS flows. Future research will focus on phase-dominant tuning using coupled electrostatic–electromagnetic modelling and engineered accumulation profiles.