This study investigates the finite-temperature-dependent electronic transport properties of two double-layer systems (DLS), namely a monolayer–monolayer graphene (MLG-MLG) and monolayer graphene–two-dimensional electron gas (MLG-2DEG), using the Boltzmann transport equation. The conductivity of the systems is examined with respect to the influence of various parameters, including the relative carrier concentration, defined as the ratio of carrier concentration \({(n}^{\left(\text{c}\right)}\) ) to Coulomb impurity concentration \({(n}^{\left(\text{CI}\right)})\) , short-range impurity concentration arising from point defects and long-range (Coulomb charge) impurity concentration, the relative dielectric constant \(({\varepsilon }_{\text{r}})\) , defined as the ratio of the dielectric constant of the spacer material \(({\varepsilon }_{2})\) to that of the substrate \(({\varepsilon }_{3})\) , and the interlayer distance \((d\) ). The results indicate a single phase transition point in the MLG-MLG system, while the MLG-2DEG system with the addition of impurities reveals two phase transition points. The conductivity as a function of interlayer distance exhibits opposite behavior in the case of the MLG-MLG and MLG-2DEG. The absence of short-range impurities improves the conductivity, and suitable selection of relative dielectric constants, relative carrier concentration, and interlayer distance can enhance the conductivity of the DLS.
