Scholarlink

<p>In this study, the impact of transition metal doping (Cu and Fe) on the structural, electronic, and interconnect properties of scandium nitride (ScN) nanoribbons of width 6 investigated for application in VLSI interconnect technology. Atomic substitutions of one and two Cu or Fe atoms were&#xa0;modeled, and the resulting configurations analyzed based on binding energy, electronic structure (Fermi energy and bandgap), and parasitic interconnect parameters.&#xa0;The calculated quantum resistance, kinetic inductance, quantum capacitance, and RC-delay&#xa0;are presented. DFT-based calculations reveal that Fe doping, particularly ScN-2Fe, yields the highest structural stability (-6.44&#xa0;eV), while Cu doping increases the bandgap, improving semiconducting behavior. In interconnect performance, ScN-1Cu possesses the optimal combination of high Fermi velocity, lowest parasitic inductance and capacitance, and lowest RC-delay (12.6&#xa0;µs) and is therefore a perfect choice for high-speed, low-loss VLSI interconnects. These findings underscore the key significance of dopant selection and concentration in determining the stability vs. conductivity vs. signal delay compromise in nanoscale interconnect materials.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Transition metal doping effects on scandium nitride nanoribbons for optimized VLSI interconnect modeling

  • 期刊论文

  • 发表日期：

    2026年2月14日

查看全文
  • Mandar Jatkar,
  • Arpan Shah,
  • B. G. Tejas

摘要

In this study, the impact of transition metal doping (Cu and Fe) on the structural, electronic, and interconnect properties of scandium nitride (ScN) nanoribbons of width 6 investigated for application in VLSI interconnect technology. Atomic substitutions of one and two Cu or Fe atoms were modeled, and the resulting configurations analyzed based on binding energy, electronic structure (Fermi energy and bandgap), and parasitic interconnect parameters. The calculated quantum resistance, kinetic inductance, quantum capacitance, and RC-delay are presented. DFT-based calculations reveal that Fe doping, particularly ScN-2Fe, yields the highest structural stability (-6.44 eV), while Cu doping increases the bandgap, improving semiconducting behavior. In interconnect performance, ScN-1Cu possesses the optimal combination of high Fermi velocity, lowest parasitic inductance and capacitance, and lowest RC-delay (12.6 µs) and is therefore a perfect choice for high-speed, low-loss VLSI interconnects. These findings underscore the key significance of dopant selection and concentration in determining the stability vs. conductivity vs. signal delay compromise in nanoscale interconnect materials.