<p>We present the design and simulation of a wavelength-tunable high-slope-efficiency (SE) and on-chip-output-power single-longitudinal-mode (SLM) erbium–ytterbium (Er–Yb)-co-doped waveguide laser (EYCDWL) operating in the C-band using OptiSystem software. The laser is implemented using a 1-cm-long EYCDW built on a lithium niobate-on-insulator (LNOI) platform and a single 980-nm backward pump. Wavelength tuning of 35&#xa0;nm in the range of 1530–1565&#xa0;nm is simulated with a side-mode suppression ratio (SMSR) over 59&#xa0;dB for coupling ratios of 40%, 50%, and 60%. Simulation results indicate that the highest SE and on-chip output power of 67.2% and 318&#xa0;mW, respectively, are obtained at a lasing wavelength of 1545&#xa0;nm for a coupling ratio of 50%. Similarly, a minimum linewidth (LW) of 125&#xa0;MHz is observed for a lasing wavelength of 1550&#xa0;nm considering a 60% coupling ratio. Power variation of around 0.13&#xa0;mW is observed for a lasing wavelength of 1545&#xa0;nm considering a 50% coupling ratio based on 12 iterations carried out at 5-min intervals. Finally, the impact of energy transfer upconversion (UC) on the output power of the EYCDWL is also analyzed. A power penalty of around 100&#xa0;mW is observed in on-chip lasing power. This tunable laser is a candidate for integration with other photonic components including wavelength lockers, modulators, and photodetectors, realizing complete photonic integrated chips (PICs) for various applications, such as short-range free-space optical communication, sensing, and next-generation computing applications.</p>

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Design and analysis of a wavelength-tunable high slope efficiency and output power Er–Yb-co-doped waveguide laser

  • Ammar Armghan,
  • Ahmad Atieh,
  • Benish Kanwal,
  • Khaled Aliqab,
  • Meshari Alsharari,
  • Slim Chaoui,
  • Jawad Mirza

摘要

We present the design and simulation of a wavelength-tunable high-slope-efficiency (SE) and on-chip-output-power single-longitudinal-mode (SLM) erbium–ytterbium (Er–Yb)-co-doped waveguide laser (EYCDWL) operating in the C-band using OptiSystem software. The laser is implemented using a 1-cm-long EYCDW built on a lithium niobate-on-insulator (LNOI) platform and a single 980-nm backward pump. Wavelength tuning of 35 nm in the range of 1530–1565 nm is simulated with a side-mode suppression ratio (SMSR) over 59 dB for coupling ratios of 40%, 50%, and 60%. Simulation results indicate that the highest SE and on-chip output power of 67.2% and 318 mW, respectively, are obtained at a lasing wavelength of 1545 nm for a coupling ratio of 50%. Similarly, a minimum linewidth (LW) of 125 MHz is observed for a lasing wavelength of 1550 nm considering a 60% coupling ratio. Power variation of around 0.13 mW is observed for a lasing wavelength of 1545 nm considering a 50% coupling ratio based on 12 iterations carried out at 5-min intervals. Finally, the impact of energy transfer upconversion (UC) on the output power of the EYCDWL is also analyzed. A power penalty of around 100 mW is observed in on-chip lasing power. This tunable laser is a candidate for integration with other photonic components including wavelength lockers, modulators, and photodetectors, realizing complete photonic integrated chips (PICs) for various applications, such as short-range free-space optical communication, sensing, and next-generation computing applications.