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<p>The single-event burnout (SEB) behavior of p-GaN gate AlGaN/GaN high-electron mobility transistors (HEMTs) was systematically investigated using technology computer-aided design (TCAD) simulations. Simulation results demonstrate that the primary mechanism underlying SEB in p-GaN gate HEMTs is hole accumulation in the buffer layer, which reduces the electron barrier from the source to the buffer layer and induces a leakage current. This causes a rapid elevation of the electric field in the channel, ultimately leading the peak electric field at the drain terminal to exceed the critical electric field of GaN, thereby triggering SEB. A radiation-hardened design is proposed, in which an AlGaN PN junction layer with the same Al mole fraction as the barrier layer is epitaxially grown on the barrier layer by metal–organic chemical vapor deposition (MOCVD). Compared with the conventional gate-field-plate p-GaN gate HEMT, the PN junction-hardened structure exhibits an optimized peak electric field distribution at the drain terminal, effectively preventing the channel electric field from exceeding the breakdown electric field limit. Under normal incidence heavy-ion irradiation with a linear energy transfer (LET) of 0.6 pC/μm, the SEB threshold voltage of the C-HEMT stands at 240&#xa0;V, whereas the H-HEMT exhibits a significantly higher SEB threshold voltage of 440&#xa0;V.</p>

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Numerical simulation of single-event burnout effects in p-GaN gate HEMTS

  • 期刊论文

  • 发表日期：

    2026年1月13日

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  • JinLong Wang,
  • JiaRui Zhao,
  • YanFei Zhang,
  • Kai Sun,
  • MengXin Liu

摘要

The single-event burnout (SEB) behavior of p-GaN gate AlGaN/GaN high-electron mobility transistors (HEMTs) was systematically investigated using technology computer-aided design (TCAD) simulations. Simulation results demonstrate that the primary mechanism underlying SEB in p-GaN gate HEMTs is hole accumulation in the buffer layer, which reduces the electron barrier from the source to the buffer layer and induces a leakage current. This causes a rapid elevation of the electric field in the channel, ultimately leading the peak electric field at the drain terminal to exceed the critical electric field of GaN, thereby triggering SEB. A radiation-hardened design is proposed, in which an AlGaN PN junction layer with the same Al mole fraction as the barrier layer is epitaxially grown on the barrier layer by metal–organic chemical vapor deposition (MOCVD). Compared with the conventional gate-field-plate p-GaN gate HEMT, the PN junction-hardened structure exhibits an optimized peak electric field distribution at the drain terminal, effectively preventing the channel electric field from exceeding the breakdown electric field limit. Under normal incidence heavy-ion irradiation with a linear energy transfer (LET) of 0.6 pC/μm, the SEB threshold voltage of the C-HEMT stands at 240 V, whereas the H-HEMT exhibits a significantly higher SEB threshold voltage of 440 V.