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<p>This study investigates the complete failure evolution mechanism in a pseudo-high-electron-mobility transistor (pHEMT) under L-band high-power microwave (HPM) injection, which is revealed to follow the pattern “field breakdown triggering-electrothermal coupling-thermal runaway,” breaking through the traditional understanding that attributes the damage mechanism simply to either field breakdown or thermal breakdown. By improving the multi-physics field algorithm and combining circuit device co-simulation, a pHEMT damage model under high-voltage conditions was established. The research shows that when the critical power threshold is exceeded, field breakdown first occurs inside the device, and hotspots form under the gate on the source side, which in turn triggers thermal runaway. By analyzing the evolution laws of carrier concentration, electric field, and ionization rate, the dynamic process of failure is clarified. Experimental verification indicates that the damaged low-noise amplifier exhibits irreversible gain reduction and S-parameter degradation. This finding provides a theoretical basis for failure prediction and protection design for high-reliability radio frequency systems.</p>

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Simulation study on thermal damage of a GaAs pHEMT LNA under L-band high-power microwave injection

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • Ruxin Zheng,
  • Chengjie Li,
  • Shikuan Liu,
  • Yixing Gu,
  • Zhicheng Xue,
  • Zhongyuan Zhou,
  • Shiping Tang

摘要

This study investigates the complete failure evolution mechanism in a pseudo-high-electron-mobility transistor (pHEMT) under L-band high-power microwave (HPM) injection, which is revealed to follow the pattern “field breakdown triggering-electrothermal coupling-thermal runaway,” breaking through the traditional understanding that attributes the damage mechanism simply to either field breakdown or thermal breakdown. By improving the multi-physics field algorithm and combining circuit device co-simulation, a pHEMT damage model under high-voltage conditions was established. The research shows that when the critical power threshold is exceeded, field breakdown first occurs inside the device, and hotspots form under the gate on the source side, which in turn triggers thermal runaway. By analyzing the evolution laws of carrier concentration, electric field, and ionization rate, the dynamic process of failure is clarified. Experimental verification indicates that the damaged low-noise amplifier exhibits irreversible gain reduction and S-parameter degradation. This finding provides a theoretical basis for failure prediction and protection design for high-reliability radio frequency systems.