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<p>Two dimensional (2D) materials carry great potential for future nanoelectronics and optoelectronics applications. These applications are very much based on the electrical properties of 2D materials. Therefore, study of the important properties of such materials is necessary for active advancement in the field. Based on this understanding, our work focuses on the study and comparison of the optical characteristics of MoTe<sub>2</sub>, hetero bilayer 2H-type MoTe<sub>2</sub>/MoSe<sub>2,</sub> and MoTe<sub>2</sub>/WSe<sub>2</sub> double gate MOSFET (DGMOSFET) photodetectors in the near infrared region (212-400 THz). A hybrid simulation method that uses both QuantumWise ATK and Sentaurus TCAD is used for the study. In this method, first the electrical parameters such as bandgap, effective mass, and mobility of 2H-bilayer MoTe<sub>2</sub> and heterobilayer MoTe<sub>2</sub>/MoSe<sub>2</sub> and MoTe<sub>2</sub>/WSe<sub>2</sub> are obtained using the QuantumWise ATK. Second, they are transported to Sentaurus TCAD for device simulation. To obtain accurate device characteristics, appropriate models such as the&#xa0;kinetic velocity model (KVM) and quantum model to account for the ballistic mobility and quantum effects in the device are used in TCAD to account for&#xa0;the ballistic mobility and quantum effects. The drain current characteristics, electric field, threshold voltage, electron concentration, and electron mobility are obtained for the photodetectors. Other parameters such as sensitivity, responsivity, quantum efficiency, and signal-to-noise ratio (S/N) of the photodetectors have also been estimated. The heterostructure MoTe<sub>2</sub> DGMOSFET offers superior performance with higher I<sub>on</sub>/I<sub>off</sub> ratio (67.713 × 10<sup>5</sup>&#xa0;A/µm), sensitivity, and responsivity.</p>

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Optical Characteristics of MoTe2, MoTe2/MoSe2, and MoTe2/WSe2 DGMOSFETs

  • 期刊论文

  • 发表日期：

    2025年10月11日

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  • R. Annapoorani,
  • S. Kavitha,
  • Susan Christina Xavier,
  • Ramesh Rathinam

摘要

Two dimensional (2D) materials carry great potential for future nanoelectronics and optoelectronics applications. These applications are very much based on the electrical properties of 2D materials. Therefore, study of the important properties of such materials is necessary for active advancement in the field. Based on this understanding, our work focuses on the study and comparison of the optical characteristics of MoTe2, hetero bilayer 2H-type MoTe2/MoSe2, and MoTe2/WSe2 double gate MOSFET (DGMOSFET) photodetectors in the near infrared region (212-400 THz). A hybrid simulation method that uses both QuantumWise ATK and Sentaurus TCAD is used for the study. In this method, first the electrical parameters such as bandgap, effective mass, and mobility of 2H-bilayer MoTe2 and heterobilayer MoTe2/MoSe2 and MoTe2/WSe2 are obtained using the QuantumWise ATK. Second, they are transported to Sentaurus TCAD for device simulation. To obtain accurate device characteristics, appropriate models such as the kinetic velocity model (KVM) and quantum model to account for the ballistic mobility and quantum effects in the device are used in TCAD to account for the ballistic mobility and quantum effects. The drain current characteristics, electric field, threshold voltage, electron concentration, and electron mobility are obtained for the photodetectors. Other parameters such as sensitivity, responsivity, quantum efficiency, and signal-to-noise ratio (S/N) of the photodetectors have also been estimated. The heterostructure MoTe2 DGMOSFET offers superior performance with higher Ion/Ioff ratio (67.713 × 105 A/µm), sensitivity, and responsivity.