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<p>Junctionless stacked nanosheet FETs (JL-SNSHFETs) are advanced devices with uniformly doped active regions, offering a wider effective channel width, improved electrostatics, and reduced short-channel effects (SCEs). However, self-heating is the major concern in nanosheet FETs, negatively impacting the device's performance. RF stability is critical for devices operating in the radio frequency range, as self-heating can significantly affect it. This work presents the insights meticulously investigated using the Synopsys Sentaurus TCAD tool on the impact of self-heating on the RF stability performance of JL-SNSHFET for different geometrical parameter variations of the device. The increase in nanosheet width and thickness increases the effective channel width and thereby increases&#xa0;the on-current; however, it also elevates the lattice temperature due to self-heating, which, in turn, deteriorates the RF stability. A ~ 10% difference in critical frequency is observed with and without self-heating. The proposed optimized JL-SNSHFET achieves an improved <i>f</i><sub><i>T</i></sub> of 145&#xa0;GHz and <i>f</i><sub>max</sub> of 340&#xa0;GHz, becoming unconditionally stable beyond the critical frequency of 170&#xa0;GHz without any stabilization network. The propounded findings expedite the RF circuit design where self-heating is a major concern.</p>

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Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

  • 期刊论文

  • 发表日期：

    2025年7月19日

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  • M. Balasubbareddy,
  • K. Sivasankaran,
  • A. E. Atamuratov,
  • M. M. Khalilloev

摘要

Junctionless stacked nanosheet FETs (JL-SNSHFETs) are advanced devices with uniformly doped active regions, offering a wider effective channel width, improved electrostatics, and reduced short-channel effects (SCEs). However, self-heating is the major concern in nanosheet FETs, negatively impacting the device's performance. RF stability is critical for devices operating in the radio frequency range, as self-heating can significantly affect it. This work presents the insights meticulously investigated using the Synopsys Sentaurus TCAD tool on the impact of self-heating on the RF stability performance of JL-SNSHFET for different geometrical parameter variations of the device. The increase in nanosheet width and thickness increases the effective channel width and thereby increases the on-current; however, it also elevates the lattice temperature due to self-heating, which, in turn, deteriorates the RF stability. A ~ 10% difference in critical frequency is observed with and without self-heating. The proposed optimized JL-SNSHFET achieves an improved fT of 145 GHz and fmax of 340 GHz, becoming unconditionally stable beyond the critical frequency of 170 GHz without any stabilization network. The propounded findings expedite the RF circuit design where self-heating is a major concern.