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<p>This paper presents a novel analytical model that incorporates the band-to-band tunneling (BTBT) effect for the Schottky-barrier carbon nanotube transistor (SB-CNTFET). This advancement has paved the way for effective routes in designing and simulating ultra-scaled-down circuits. The model has been developed to provide an analytical solution to the current Landauer integral equation. To achieve this solution, approximations for the Fermi–Dirac distribution function, the band-to-band tunneling probability, and the Wentzel-Kramers-Brillouin (WKB) transmission probability have been employed. In this context, the proposed approach was utilized to model a one-dimensional (1D) Schottky barrier (SB) Gate-All-Around (GAA) CNTFET. The suggested model exhibits a high degree of agreement with experimental data, as demonstrated by the following errors: 1.6% in the threshold voltage, 4.5% in the on-current, and 1.35% in the drain-induced barrier lowering (DIBL). Furthermore, the efficiency of the proposed model is underscored by a reported computation time of approximately 1.39&#xa0;s, representing a significant improvement over existing numerical models. This notable reduction in computing time highlights the advantages of employing an analytical method for CNTFET modeling. Consequently, this work successfully merges the speed and accuracy of circuit simulators.</p>

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Design and evaluation of an analytical model for one-dimensional ballistic Schottky barrier GAA carbon nanotube FETs including BTBT effects

  • 期刊论文

  • 发表日期：

    2025年6月13日

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  • Ibrahim L. Abdalla,
  • Fatma A. Matter,
  • Eslam S. El-Mokadem,
  • Hesham F. A. Hamed,
  • Aziza I. Hussein,
  • Ahmed. A. Afifi

摘要

This paper presents a novel analytical model that incorporates the band-to-band tunneling (BTBT) effect for the Schottky-barrier carbon nanotube transistor (SB-CNTFET). This advancement has paved the way for effective routes in designing and simulating ultra-scaled-down circuits. The model has been developed to provide an analytical solution to the current Landauer integral equation. To achieve this solution, approximations for the Fermi–Dirac distribution function, the band-to-band tunneling probability, and the Wentzel-Kramers-Brillouin (WKB) transmission probability have been employed. In this context, the proposed approach was utilized to model a one-dimensional (1D) Schottky barrier (SB) Gate-All-Around (GAA) CNTFET. The suggested model exhibits a high degree of agreement with experimental data, as demonstrated by the following errors: 1.6% in the threshold voltage, 4.5% in the on-current, and 1.35% in the drain-induced barrier lowering (DIBL). Furthermore, the efficiency of the proposed model is underscored by a reported computation time of approximately 1.39 s, representing a significant improvement over existing numerical models. This notable reduction in computing time highlights the advantages of employing an analytical method for CNTFET modeling. Consequently, this work successfully merges the speed and accuracy of circuit simulators.