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<p>Tin oxide, a distinguished metal oxide suitable for optoelectronic usage, has features that can be easily enhanced through doping. In the current study, films of zinc-doped SnO<sub>2</sub> (Zn/Sn = 0.03) were synthesized via the sol-gel screen-printing strategy and subsequently sintered at 450°C for 10 min. X-ray diffraction findings established the polycrystalline characteristics and single-phase tetragonal configuration of the synthesized films. The occurrence of Sn, O, and Zn ions is evidenced by energy-dispersive X-ray analysis. According to UV-Vis analysis, the band gap energy (direct transition) was found to be 3.62 eV. Hall measurement analysis revealed the n-type conductivity of the films, characterized by a resistivity of 1.03 × 10<sup>–3</sup> Ω∙cm.</p>

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Low-Cost Synthesis of Zinc-Doped SnO2 Films for Optoelectronic Applications

  • 期刊论文

  • 发表日期：

    2026年7月21日

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  • Vipin Kumar,
  • Soniya Juneja,
  • Akansha Agrwal,
  • Priyanka Rai,
  • Parvin Kumar,
  • Abhishek Sharma,
  • D. K. Dwivedi,
  • N. P. Yadav,
  • Monika Gupta,
  • Pradeep Kumar,
  • R. A. Zargar

摘要

Tin oxide, a distinguished metal oxide suitable for optoelectronic usage, has features that can be easily enhanced through doping. In the current study, films of zinc-doped SnO2 (Zn/Sn = 0.03) were synthesized via the sol-gel screen-printing strategy and subsequently sintered at 450°C for 10 min. X-ray diffraction findings established the polycrystalline characteristics and single-phase tetragonal configuration of the synthesized films. The occurrence of Sn, O, and Zn ions is evidenced by energy-dispersive X-ray analysis. According to UV-Vis analysis, the band gap energy (direct transition) was found to be 3.62 eV. Hall measurement analysis revealed the n-type conductivity of the films, characterized by a resistivity of 1.03 × 10–3 Ω∙cm.