<p>Thin films of lanthanum oxide doped with erbium, LaMnO<sub>3</sub> + 0.5%Er<sub>2</sub>O<sub>3</sub> deposited in a vacuum (p = 3 Pa) on quartz and silicon substrates were studied with multi-pulse high-frequency (f ~ 12–15 kHz) laser action on a ceramic target at a laser radiation power density q = 81 MW/cm<sup>2</sup>. The morphology of the obtained films was studied using atomic force microscopy and transmission and reflection spectra. The electrophysical properties of the LaMnO<sub>3</sub> + 0.5%Er<sub>2</sub>O<sub>3</sub> structure was analyzed.</p>

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Surface Morphology and Optical and Electrophysical Properties of Erbium-doped Lanthanum Oxide Films Obtained by Laser Deposition

  • N. A. Bosak,
  • L. V. Baran,
  • V. V. Malyutina-Bronskaya,
  • A. V. Buka,
  • T. V. Kolontaeva,
  • A. A. Shevchenok,
  • A. S. Kuzmitskaya

摘要

Thin films of lanthanum oxide doped with erbium, LaMnO3 + 0.5%Er2O3 deposited in a vacuum (p = 3 Pa) on quartz and silicon substrates were studied with multi-pulse high-frequency (f ~ 12–15 kHz) laser action on a ceramic target at a laser radiation power density q = 81 MW/cm2. The morphology of the obtained films was studied using atomic force microscopy and transmission and reflection spectra. The electrophysical properties of the LaMnO3 + 0.5%Er2O3 structure was analyzed.