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<p>The dynamic vacuum-assisted thermal annealing method was employed to prepare active layers of the perovskite CsPbI<sub>3</sub>, which is highly suitable for solar cells due to its high stability and optimal band gap (1.7 eV). Application of this method improved the active layer structure due to the reduction of defect states and nanopores and the increase of crystalline grain size. The dynamic vacuum-assisted thermal annealing method effectively reduced the trap-state density and suppressed recombination due to the faster removal of dimethylformamide (DMF). The optical and photoelectric properties of perovskite solar cells (PSCs) fabricated using dynamic vacuum-assisted thermal annealing method were comparatively analyzed versus ambient-condition processing. As a result, the open-circuit voltage (<i>V</i><sub>oc</sub>) of PSCs prepared by the vacuum-assisted method at low temperatures increased from 1.08 to 1.16 V. Also, the power conversion efficiency of the active layers improved from 16.5 to 18.8%.</p>

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Preparation of Efficient and Stable CsPbI3 Perovskite Active Layers by Dynamic Vacuum Method

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • N. F. Otakulova,
  • M. A. Zakhidova,
  • Sh. K. Nematov,
  • L. R. Nurumbetova,
  • M. Saqlain,
  • B. Shahid,
  • A. A. Saparbaev

摘要

The dynamic vacuum-assisted thermal annealing method was employed to prepare active layers of the perovskite CsPbI3, which is highly suitable for solar cells due to its high stability and optimal band gap (1.7 eV). Application of this method improved the active layer structure due to the reduction of defect states and nanopores and the increase of crystalline grain size. The dynamic vacuum-assisted thermal annealing method effectively reduced the trap-state density and suppressed recombination due to the faster removal of dimethylformamide (DMF). The optical and photoelectric properties of perovskite solar cells (PSCs) fabricated using dynamic vacuum-assisted thermal annealing method were comparatively analyzed versus ambient-condition processing. As a result, the open-circuit voltage (Voc) of PSCs prepared by the vacuum-assisted method at low temperatures increased from 1.08 to 1.16 V. Also, the power conversion efficiency of the active layers improved from 16.5 to 18.8%.