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<p>Cree 4<i>H</i>-SiC single crystal wafers were studied by high-resolution nondestructive photoluminescence (PL) at room temperature to investigate experimentally near-band-edge (NBE) and stacking fault PL. The contribution of stacking fault PL to the PL spectrum of the original 4<i>H</i>-SiC crystals allowed the intensity ratios of band-to-band, NBE, and stacking fault PL to be evaluated. The experimental PL spectrum of 4<i>H</i>-SiC obeyed a Lorentzian distribution. Electron–phonon interaction led to a significant mutual dependence of the band-to-band, NBE, and stacking fault PL intensities.</p>

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Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • B. G. Atabaev,
  • Kh.N. Juraev,
  • Z. Sh. Shaymardanov,
  • R. R. Jalolov,
  • Sh.Z. Urolov

摘要

Cree 4H-SiC single crystal wafers were studied by high-resolution nondestructive photoluminescence (PL) at room temperature to investigate experimentally near-band-edge (NBE) and stacking fault PL. The contribution of stacking fault PL to the PL spectrum of the original 4H-SiC crystals allowed the intensity ratios of band-to-band, NBE, and stacking fault PL to be evaluated. The experimental PL spectrum of 4H-SiC obeyed a Lorentzian distribution. Electron–phonon interaction led to a significant mutual dependence of the band-to-band, NBE, and stacking fault PL intensities.