Scholarlink

<p>Nanostructured thin films on silicon substrate were obtained by high-frequency pulse-periodic (<i>f</i> ~ 13 kHz) action of laser radiation with a wavelength of 1.064 μm and a power density of <i>q</i> = 64 MW/cm<sup>2</sup> on yttrium vanadate YVO<sub>4</sub> ceramics at a vacuum chamber pressure of <i>p</i> = 3 Pa. The morphology of thin YVO<sub>4</sub> films was studied using atomic force microscopy. Transmittance spectra of YVO<sub>4</sub> films were obtained in the visible, near, and mid-IR regions. The electrophysical characteristics of YVO<sub>4</sub>/Si structures were analyzed.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Surface Morphology and Optical and Physical Properties of YVO4 Films

  • 期刊论文

  • 发表日期：

    2025年5月30日

查看全文
  • N. A. Bosak,
  • A. N. Chumakov,
  • L. V. Baran,
  • V. V. Malyutina-Bronskaya,
  • T. F. Raichenok,
  • A. A. Ivanov,
  • V. V. Kiris,
  • E. M. Dyatlova,
  • A. A. Shevchenok,
  • A. V. Buka,
  • A. S. Kuzmitskaya

摘要

Nanostructured thin films on silicon substrate were obtained by high-frequency pulse-periodic (f ~ 13 kHz) action of laser radiation with a wavelength of 1.064 μm and a power density of q = 64 MW/cm2 on yttrium vanadate YVO4 ceramics at a vacuum chamber pressure of p = 3 Pa. The morphology of thin YVO4 films was studied using atomic force microscopy. Transmittance spectra of YVO4 films were obtained in the visible, near, and mid-IR regions. The electrophysical characteristics of YVO4/Si structures were analyzed.