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<p>The effect of the structural layer thickness on the absorption peak intensity and bandwidth in optical absorption spectra of Si<sub>3</sub>N<sub>4</sub>/Me/Si<sub>3</sub>N<sub>4</sub> structures calculated by the finite differences in time domain method was found. The absorption increased by ~20% and the absorption band with an intensity of &gt;90% broadened from 0.8 to 1.6 μm if the total thickness of the upper and lower layers of Si<sub>3</sub>N<sub>4</sub> was reduced from 400 to 100 nm. It was shown that the width of the absorption band with an intensity of &gt;90% was 4.3 μm in the absorption spectrum of an Si<sub>3</sub>N<sub>4</sub>/Ti/Si<sub>3</sub>N<sub>4</sub> structure with a thickness of 50 nm for each layer. The maximum absorption decreased insignificantly from 99 to 96% if the thickness of the profiled Ti layer was reduced from 130 to 50 nm. It was shown that the absorption band broadening was associated with the effect of the Si<sub>3</sub>N<sub>4</sub> thickness on interference processes in the Si<sub>3</sub>N<sub>4</sub>/Ti/Si<sub>3</sub>N<sub>4</sub> structures. It was established that the absorption level in the range 8.3–13 μm depended on the metal type because of the dependence of the free-electron concentration on the metal type.</p>

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Influence of Metal Type and Layer Thickness on Absorption of Optical Radiation by Profiled Si3N4/Me/Si3N4 Structures

  • 期刊论文

  • 发表日期：

    2025年5月30日

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  • S. V. Kozodoev,
  • A. I. Muhammad,
  • V. V. Kolos,
  • P. I. Gaiduk

摘要

The effect of the structural layer thickness on the absorption peak intensity and bandwidth in optical absorption spectra of Si3N4/Me/Si3N4 structures calculated by the finite differences in time domain method was found. The absorption increased by ~20% and the absorption band with an intensity of >90% broadened from 0.8 to 1.6 μm if the total thickness of the upper and lower layers of Si3N4 was reduced from 400 to 100 nm. It was shown that the width of the absorption band with an intensity of >90% was 4.3 μm in the absorption spectrum of an Si3N4/Ti/Si3N4 structure with a thickness of 50 nm for each layer. The maximum absorption decreased insignificantly from 99 to 96% if the thickness of the profiled Ti layer was reduced from 130 to 50 nm. It was shown that the absorption band broadening was associated with the effect of the Si3N4 thickness on interference processes in the Si3N4/Ti/Si3N4 structures. It was established that the absorption level in the range 8.3–13 μm depended on the metal type because of the dependence of the free-electron concentration on the metal type.