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<p>Si single crystal was sequentially implanted with high doses (2∙1016 cm<sup>-2</sup>) of In<sup>+</sup> and Sb<sup>+</sup> ions with an energy of 30 keV in order to synthesize a layer of narrow-gap indium antimonide (InSb) in its near-surface region. Implanted Si:(In + Sb) layers in the liquid phase were annealed with a powerful pulsed (~100 ns) ion beam (C<sup>+</sup>/H<sup>+</sup>) with an energy of 300 keV and a pulse-energy density of 1.0 J/cm<sup>2</sup>. Calculation of the total depth profile of the concentration of implanted In and Sb atoms taking into account ion sputtering showed their maximum concentration of 40 at.% at a depth of ~20 nm. Segregation of impurity atoms to the Si surface because of pulsed annealing was detected using the Rutherford backscattering of He<sup>+</sup> ions. X-ray diffraction spectra in grazing beams and Raman light scattering indicated an InSb phase with a tensile strain level of 0.6–0.7% formed. The electron concentration in the layer (2∙1020 cm<sup>-3</sup>) due to the Sb donor impurity was estimated using optical IR spectra. An intense absorption band at 3.85 μm was shown to form. Photoresponse measurements on a diode mesa-structure at 300 K showed a shift in the photosensitivity edge to 1240 nm as compared to a standard FD-24 Si photodiode.</p>

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Structural, Optical, and Photoelectric Properties of Silicon Implanted with Indium and Antimony Ions and Subjected to Pulsed Annealing

  • 期刊论文

  • 发表日期：

    2025年1月11日

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  • R. I. Batalov,
  • V. V. Bazarov,
  • V. I. Nuzhdin,
  • V. F. Valeev,
  • H. A. Novikov,
  • V. A. Shustov,
  • K. N. Galkin,
  • I. B. Chistokhin,
  • F. F. Komarov,
  • O. V. Milchanin,
  • I. N. Parkhomenko

摘要

Si single crystal was sequentially implanted with high doses (2∙1016 cm-2) of In+ and Sb+ ions with an energy of 30 keV in order to synthesize a layer of narrow-gap indium antimonide (InSb) in its near-surface region. Implanted Si:(In + Sb) layers in the liquid phase were annealed with a powerful pulsed (~100 ns) ion beam (C+/H+) with an energy of 300 keV and a pulse-energy density of 1.0 J/cm2. Calculation of the total depth profile of the concentration of implanted In and Sb atoms taking into account ion sputtering showed their maximum concentration of 40 at.% at a depth of ~20 nm. Segregation of impurity atoms to the Si surface because of pulsed annealing was detected using the Rutherford backscattering of He+ ions. X-ray diffraction spectra in grazing beams and Raman light scattering indicated an InSb phase with a tensile strain level of 0.6–0.7% formed. The electron concentration in the layer (2∙1020 cm-3) due to the Sb donor impurity was estimated using optical IR spectra. An intense absorption band at 3.85 μm was shown to form. Photoresponse measurements on a diode mesa-structure at 300 K showed a shift in the photosensitivity edge to 1240 nm as compared to a standard FD-24 Si photodiode.