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<p>The graphene/Si Schottky diode exploits graphene’s unique properties. The barrier height, ideality factor, and rectification factor are important parameters that can affect the performance of a Schottky diode. The voltage-partition factor, which determines the ratio of the applied bias voltage distribution between the semiconductor depletion region and the graphene Fermi level and causes a shift in the Fermi level, plays an important role. In the present paper, the effect of the voltage-partition factor on the ideality factor, the current–voltage (I–V) characteristics, and the quantum capacitance of a graphene/n-Si Schottky diode is systematically modeled and investigated. Due to the finite density of states in graphene, the applied voltage is partitioned between graphene and the silicon depletion region. Hence, this leads to a bias-dependent Fermi-level shift in graphene and a voltage-dependent Schottky barrier height. Therefore, voltage partitioning directly modulates the reverse saturation current, ideality factor, and quantum capacitance of the junction. Here, the variation of the ideality factor with applied voltage, Fermi-level shift, and quantum capacitance is explored for different values of the voltage-partition factor. Subsequently, the effective ideality factor is extracted, and its analytical relationship with the voltage-partition factor is examined.The modeled results are then compared with reported data from a fabricated graphene/Si Schottky diode, showing good agreement for I–V characteristics at partition factors in the range of 0.1 &lt; α &lt; 0.2. The outcomes reveal that increasing the voltage-partition factor enhances the quantum capacitance and suppresses the effective ideality factor toward its ideal value (<i>η≈1</i>) by reducing the influence of the silicon depletion region. Furthermore, the voltage-dependent reverse saturation current is shown to play a critical role in determining the rectification ratio and non-ideal diode behavior. These findings highlight the importance of voltage-partition engineering in optimizing graphene/Si Schottky diodes for solar-cell and optoelectronic device applications.</p>

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Voltage Partition–Driven Modulation of Quantum Capacitance and Ideality Factor in Graphene/Si Schottky Junctions

  • 期刊论文

  • 发表日期：

    2026年3月22日

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  • Banafsheh Alizadeh Arashloo

摘要

The graphene/Si Schottky diode exploits graphene’s unique properties. The barrier height, ideality factor, and rectification factor are important parameters that can affect the performance of a Schottky diode. The voltage-partition factor, which determines the ratio of the applied bias voltage distribution between the semiconductor depletion region and the graphene Fermi level and causes a shift in the Fermi level, plays an important role. In the present paper, the effect of the voltage-partition factor on the ideality factor, the current–voltage (I–V) characteristics, and the quantum capacitance of a graphene/n-Si Schottky diode is systematically modeled and investigated. Due to the finite density of states in graphene, the applied voltage is partitioned between graphene and the silicon depletion region. Hence, this leads to a bias-dependent Fermi-level shift in graphene and a voltage-dependent Schottky barrier height. Therefore, voltage partitioning directly modulates the reverse saturation current, ideality factor, and quantum capacitance of the junction. Here, the variation of the ideality factor with applied voltage, Fermi-level shift, and quantum capacitance is explored for different values of the voltage-partition factor. Subsequently, the effective ideality factor is extracted, and its analytical relationship with the voltage-partition factor is examined.The modeled results are then compared with reported data from a fabricated graphene/Si Schottky diode, showing good agreement for I–V characteristics at partition factors in the range of 0.1 < α < 0.2. The outcomes reveal that increasing the voltage-partition factor enhances the quantum capacitance and suppresses the effective ideality factor toward its ideal value (η≈1) by reducing the influence of the silicon depletion region. Furthermore, the voltage-dependent reverse saturation current is shown to play a critical role in determining the rectification ratio and non-ideal diode behavior. These findings highlight the importance of voltage-partition engineering in optimizing graphene/Si Schottky diodes for solar-cell and optoelectronic device applications.