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<p>The effect of vanadium (V) doping (0–15 wt%) on optical, dielectric, and conductive properties of zinc oxide in the THz frequency range has been reported. Terahertz time-domain spectroscopy (THz-TDS), along with effective medium approximation, has been used for the investigation of refractive index, absorption coefficient, dielectric constant, and conductivity of undoped as well as V-doped ZnO. With an increase in dopant concentration, a significant increase in these parameters has been observed. Moreover, Drude-Smith model fitting on THz conductivity curves reveals the localization of carriers and back scattering as a major conductivity mechanism. The plasma frequency and carrier scattering time have been extracted during the fitting process. Vanadium doping in ZnO provides fine control over the tuning of refractive index, absorption coefficient, dielectric constant, and conductivity for the design and development of THz devices, including emitters, detectors, and modulators.</p>

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Study of Vanadium Doping Effect on Optical and Conductive Properties of Zinc Oxide in Terahertz Frequency Regime

  • 期刊论文

  • 发表日期：

    2026年4月28日

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  • Shaista Parveen,
  • Muhammad Mumtaz,
  • M. Ahsan Mahmood,
  • Sabih D. Khan,
  • Amjid Iqbal,
  • Izhar Ahmad

摘要

The effect of vanadium (V) doping (0–15 wt%) on optical, dielectric, and conductive properties of zinc oxide in the THz frequency range has been reported. Terahertz time-domain spectroscopy (THz-TDS), along with effective medium approximation, has been used for the investigation of refractive index, absorption coefficient, dielectric constant, and conductivity of undoped as well as V-doped ZnO. With an increase in dopant concentration, a significant increase in these parameters has been observed. Moreover, Drude-Smith model fitting on THz conductivity curves reveals the localization of carriers and back scattering as a major conductivity mechanism. The plasma frequency and carrier scattering time have been extracted during the fitting process. Vanadium doping in ZnO provides fine control over the tuning of refractive index, absorption coefficient, dielectric constant, and conductivity for the design and development of THz devices, including emitters, detectors, and modulators.