This paper presents a comparative study of radiation-induced defect formation in pure LiF and \(\:O{H}^{-}\) -doped LiF crystals under electron irradiation (5 MeV) at a low temperature of 165 K. Absorption spectra were analyzed for fluences ranging from \(\:{10}^{14}\) to \(\:{10}^{15}\:\text{c}{\text{m}}^{-2}\) . It was found that while \(\:F\) -center accumulation is similar in both crystal types, the kinetics of \(\:{F}_{2}\) and \(\:{F}_{3}^{+}\) aggregate centers (445 nm) differ significantly. In LiF: OH- a suppression of aggregate center growth was observed at higher fluences compared to pure LiF. The results are explained by the trapping of anionic vacancies by hydroxyl ions and their dissociation products ( \(\:{O}_{2}^{-}\) , \(\:{H}_{i}^{0}\) ), which inhibits the migration and subsequent aggregation of primary defects.
