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<p>The purpose of the present study is to enhance electrical conductivity of In-containing ZnO (IZO) by controlling association/dissociation behavior of In ions in ZnO matrix. In the course of the research, we found that atmospheric condition in the heat-treatment process directly controls the chemical states of doped In ions. In ions of impurity-level content form a nanosized secondary phase in the matrix when heated in air. In contrast, the nanostructures can be decomposed by vacuum heating; however, the surface of ZnO sample becomes oxygen deficient under overheating in vacuum. In the present work, we demonstrate that the semiconductor surface can be restored by heat treatment in air at 973&#xa0;K making oxygen atoms resorbed back to the surface. Here, the detailed oxygen resorption method is reported.</p>

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Enhancement of electrical conductivity of In-doped ZnO by atmosphere-controlled heat treatment

  • 期刊论文

  • 发表日期：

    2026年4月23日

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  • W. Sato,
  • M. Takata,
  • H. Shimizu

摘要

The purpose of the present study is to enhance electrical conductivity of In-containing ZnO (IZO) by controlling association/dissociation behavior of In ions in ZnO matrix. In the course of the research, we found that atmospheric condition in the heat-treatment process directly controls the chemical states of doped In ions. In ions of impurity-level content form a nanosized secondary phase in the matrix when heated in air. In contrast, the nanostructures can be decomposed by vacuum heating; however, the surface of ZnO sample becomes oxygen deficient under overheating in vacuum. In the present work, we demonstrate that the semiconductor surface can be restored by heat treatment in air at 973 K making oxygen atoms resorbed back to the surface. Here, the detailed oxygen resorption method is reported.