Effect of indium doping on the physical properties of CdSe thin films grown by SILAR method
摘要
Current study reports growth of CdSe and indium doped CdSe (In: CdSe) thin films deposited on stainless steel (SS) and glass substrates in water based solutions. The doping percentage of indium has been refined to 0.1 vol% using photoelectrochemical (PEC) practice. To examine the impact of indium doping on various physical properties, these films are characterized by use of X-ray diffraction, Raman spectroscopy, contact angle measurement, UV–visible spectrophotometry, field emission scanning electron microscopy and energy dispersive X-ray spectroscopy techniques. Both undoped and doped CdSe thin films displays cubic crystal structure. undoped CdSe thin film shows cauliflower like morphology, which transforms into red grape marine algae-like upon doping. The elemental composition is analyzed by means of energy dispersive X-ray spectroscopy.Indium doping improves the hydrophilic nature of CdSe film. It also decreases the optical band gap (direct) from 2.15 to 1.88 eV and shows improvement in photoactivity.