<p>Halide perovskite materials have gained considerable attention lately as semiconductor materials for various optoelectronic applications due to their exceptional electronic, optical, and catalytic properties. However, some significant issues such as instability and toxicity due to presence of lead hinder their potential applications in various field. Herein, Cs<sub>2</sub>AgBiBr<sub>6</sub> halide double perovskite is synthesized via spin-coating method. The impact of precursor solution and annealing temperature on the film’s optical characteristics were examined. The X-ray diffraction (XRD) measurements indicate the compound adopts a cubic double perovskite structure. The FESEM results confirms the change in surface morphology of the films with precursor concentration. The UV-Vis analysis shows that the film’s absorption and bandgap is affected by both the concentration of the precursor solution and the annealing temperature. Increasing the precursor concentration and annealing temperature leads to a decrease in band gap of the film.</p>

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Effect of precursor concentration and annealing temperature on the optical properties of Cs2AgBiBr6 perovskite thin film

  • Manoj Bora,
  • Nikhil Parasar,
  • Mahananda Baro

摘要

Halide perovskite materials have gained considerable attention lately as semiconductor materials for various optoelectronic applications due to their exceptional electronic, optical, and catalytic properties. However, some significant issues such as instability and toxicity due to presence of lead hinder their potential applications in various field. Herein, Cs2AgBiBr6 halide double perovskite is synthesized via spin-coating method. The impact of precursor solution and annealing temperature on the film’s optical characteristics were examined. The X-ray diffraction (XRD) measurements indicate the compound adopts a cubic double perovskite structure. The FESEM results confirms the change in surface morphology of the films with precursor concentration. The UV-Vis analysis shows that the film’s absorption and bandgap is affected by both the concentration of the precursor solution and the annealing temperature. Increasing the precursor concentration and annealing temperature leads to a decrease in band gap of the film.