Implementation of electro-optic XOR and XNOR gates using dual silicon microring resonator assisted MZI structure
摘要
This paper presents an electro-optical logic architecture featuring two PIN microring resonators (MRRs) that simultaneously perform XOR and XNOR operations. The architecture uses electro-optic effects to enable carrier injection in the silicon waveguide, allowing precise control of the MRRs for switching. This method of using light for data transmission significantly reduces state delay compared to traditional logic circuits and helps mitigate power and bandwidth limitations. The design incorporates two silicon PIN MRRs strategically placed on the arms of a Mach-Zehnder Interferometer (MZI) structure, with the first MRR in an add-drop configuration on the upper MZI arm and the second MRR functioning as an all-pass resonator on the lower MZI arm. Modulation of the MRRs is achieved using two pseudo-random binary sequences (PRBS) at 2.5 GHz, with electrical signals of -1.85 volts and +2 volts representing logic levels ‘0’ and ‘1’, respectively. Simulations validate the design’s feasibility and performance, demonstrating promising results for XOR and XNOR operations with an extinction ratio (ER) exceeding 5 dB.