<p>Controlling the emission wavelength of quantum dots (QDs) is a veritable assignment. Demand for excessive great semiconductor material working in the 1.55 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m is substantially growing. The longest wavelength emission for InAs/GaAs QDs is 1.3 <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m. Extensive research at the InAs/GaAs QDs system have been performed to push InAs/GaAs QDs to operate at <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(\sim \)</EquationSource> <EquationSource Format="MATHML"><math> <mo>∼</mo> </math></EquationSource> </InlineEquation> 1.55<InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m. In this paper, it turned into proven that a excessive compressive strain is the large drawback for the formation of top pleasant InAs/GaAs quantum dots emitting beyond 1.3 <InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m. The lack of ability of the InAs/GaAs QDs system to reach the wavelength of 1.55 <InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m results in the use of the InAs/InP QDs system. Very few experimental research have been completed on the InAs/InP Qds device compared to the InAs/GaAs Qds device. Therefore, theoretical researches can be useful in this case. This paper discusses the potential of InAs/InP QDs to emit inside the 1.55 <InlineEquation ID="IEq7"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m. It has been proven, the usage of the Effective Mass Approximation version, that emission wavelength at 1.55 <InlineEquation ID="IEq8"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m at room temperature can be executed through this QDs system. Tuning the emission wavelength of InAs/InP QDs to around 1.55 <InlineEquation ID="IEq9"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m, with higher precision, may be plausible with the aid of adjusting the size of QDs, way to the impact of quantum confinement which plays a fundamental function in enhancing the properties of QDs. Because the emission wavelength depend substantially on the thickness of InAs layers deposited, a careful control of the growth conditions is important to obtain an emission wavelength of 1.55 <InlineEquation ID="IEq10"> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m by using InAs/InP QDs avoiding the additional amount of InAs added by As/P exchange.</p>