<p>The paper presents the results of studying the properties of polycrystalline powders and films of CsCu<sub>2</sub>Br<sub>3</sub> and CsCu<sub>2</sub>I<sub>3</sub> compounds obtained by vacuum thermal evaporation. X-ray phase analysis confirmed the formation of single-phase films which showed good agreement with the initial compositions. The microstructure of the films was studied by scanning electron microscopy. The CsCu<sub>2</sub>I<sub>3</sub> and CsCu<sub>2</sub>Br<sub>3</sub> films were found to comprise rounded crystals ranging in size from tens nanometers to 200 nm. The obtained results confirm the potential of applying vacuum thermal evaporation for depositing CsCu<sub>2</sub>Br<sub>3</sub> and CsCu<sub>2</sub>I<sub>3</sub> films for application in the field of optoelectronics. However, in order to obtain thicker and more continuous films, a sufficiently long duration of the sputtering process must be ensured.</p>

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Photoluminescent Properties of Thick Films of Cesium Copper (I) Halides

  • D. R. Alieva,
  • N. Kh. Nosirova,
  • S. T. Umedov,
  • R. Kh. Kamilov,
  • M. O. Astafurov,
  • L. S. Lepnev,
  • A. V. Grigorieva

摘要

The paper presents the results of studying the properties of polycrystalline powders and films of CsCu2Br3 and CsCu2I3 compounds obtained by vacuum thermal evaporation. X-ray phase analysis confirmed the formation of single-phase films which showed good agreement with the initial compositions. The microstructure of the films was studied by scanning electron microscopy. The CsCu2I3 and CsCu2Br3 films were found to comprise rounded crystals ranging in size from tens nanometers to 200 nm. The obtained results confirm the potential of applying vacuum thermal evaporation for depositing CsCu2Br3 and CsCu2I3 films for application in the field of optoelectronics. However, in order to obtain thicker and more continuous films, a sufficiently long duration of the sputtering process must be ensured.