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<p>The deposition of thin films using vacuum techniques is highly desirable for device fabrication due to the high reproducibility, uniformity, smoothness, and desired thickness. In this report, cobalt thin films were fabricated by the thermal evaporation method; the as-prepared samples were annealed at different temperatures (350&#xa0;°C, 450&#xa0;°C and 550&#xa0;°C) in an oxygen atmosphere to form cobalt oxide. The method of metal thin-film annealing not only transforms them into metal oxides but also reduces major defects, having a significant impact on device performance. Various characterizations examined the morphological and structural characteristics of the altered samples. The electronic structure of cobalt thin films was extracted from DFT calculations. The sample annealed at 350&#xa0;°C showed the lowest Tafel slope of 119 mV/dec. As the annealing temperature is raised while using these samples for oxygen evolution reaction applications in 0.5&#xa0;M KOH solution, the electrode performance rapidly declines. Therefore, the present study demonstrates that the deposited thin films for electrocatalysis applications are potentially used for energy production.</p> Graphical Abstract <p></p>

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Tuning the Electrocatalytic Performance of Cobalt Thin Films via Oxygen Annealing for Oxygen Evolution Reactions in Alkaline Media

  • 期刊论文

  • 发表日期：

    2026年5月19日

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  • K. Poshan Kumar Reddy,
  • K. M. M. D. K. Kimbulapitiya,
  • Sumayah Shakil Wani,
  • Nishchal Bharadwaj,
  • Shyam Narayan Singh Yadav,
  • Srikanth Mohanty,
  • G. Phaneendra Reddy,
  • Bushra Rehman,
  • P. R. Sekhar Reddy

摘要

The deposition of thin films using vacuum techniques is highly desirable for device fabrication due to the high reproducibility, uniformity, smoothness, and desired thickness. In this report, cobalt thin films were fabricated by the thermal evaporation method; the as-prepared samples were annealed at different temperatures (350 °C, 450 °C and 550 °C) in an oxygen atmosphere to form cobalt oxide. The method of metal thin-film annealing not only transforms them into metal oxides but also reduces major defects, having a significant impact on device performance. Various characterizations examined the morphological and structural characteristics of the altered samples. The electronic structure of cobalt thin films was extracted from DFT calculations. The sample annealed at 350 °C showed the lowest Tafel slope of 119 mV/dec. As the annealing temperature is raised while using these samples for oxygen evolution reaction applications in 0.5 M KOH solution, the electrode performance rapidly declines. Therefore, the present study demonstrates that the deposited thin films for electrocatalysis applications are potentially used for energy production.

Graphical Abstract