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<p>Based on the nonlinear drift-diffusion (NLDD) model, the coupled behavior between the mechanical and electrical fields in piezoelectric semiconductor (PS) PN junctions under two typical loading conditions is investigated. The governing equations for the general shell structure of the PS PN junction are derived within the framework of virtual work principles and charge continuity conditions. The distributions of the electromechanical coupling field are obtained by the Fourier series expansion and the differential quadrature method (DQM), and the nonlinearity is addressed with the iterative method. Several numerical examples are presented to investigate the effects of mechanical loading on the charge carrier transport characteristics. It is found that the barrier height of the heterojunction can be effectively modulated by mechanical loading. Furthermore, a nonlinearity index is introduced to quantify the influence of nonlinearity in the model. It is noted that, when the concentration difference between the two sides is considerable, the nonlinear results differ significantly from the linear results, thereby necessitating the adoption of the NLDD model.</p>

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Analysis of the electromechanical coupling characteristics of piezoelectric semiconductor PN junction shell structures

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Tiqing Wang,
  • Feng Zhu,
  • Peng Li,
  • Zelin Xu,
  • Tingfeng Ma,
  • I. Kuznetsova,
  • Zhenghua Qian

摘要

Based on the nonlinear drift-diffusion (NLDD) model, the coupled behavior between the mechanical and electrical fields in piezoelectric semiconductor (PS) PN junctions under two typical loading conditions is investigated. The governing equations for the general shell structure of the PS PN junction are derived within the framework of virtual work principles and charge continuity conditions. The distributions of the electromechanical coupling field are obtained by the Fourier series expansion and the differential quadrature method (DQM), and the nonlinearity is addressed with the iterative method. Several numerical examples are presented to investigate the effects of mechanical loading on the charge carrier transport characteristics. It is found that the barrier height of the heterojunction can be effectively modulated by mechanical loading. Furthermore, a nonlinearity index is introduced to quantify the influence of nonlinearity in the model. It is noted that, when the concentration difference between the two sides is considerable, the nonlinear results differ significantly from the linear results, thereby necessitating the adoption of the NLDD model.