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<p>Portable skin-cancer screening wearables demand memory subsystems that are simultaneously energy-efficient, mechanically compliant, and quality-adaptive, requirements unmet by conventional rigid silicon SRAM. This work introduces TRUNC-O-SRAM, an all-p-type Organic Thin-Film Transistor (pOTFT) 8T Static Random-Access Memory (SRAM) designed for flexible substrate deployment, built on a Dual-Split Bottom-Gate Bottom-Contact (DS-BGBC) topology with p+ pentacene channel doping on a L<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(a_{0.648}\)</EquationSource> </InlineEquation>N<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(b_{(0.352)}O_y\)</EquationSource> </InlineEquation> gate dielectric. Task-aware hierarchical word encoding stores higher-order luminance and lesion-critical bits in stable, read-decoupled 8T cells while selectively truncating lower-order bits, enabling PSNR/SSIM guided in memory precision scaling without perceptual degradation. At 0.5 <InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(V_{DD}\)</EquationSource> </InlineEquation> and 27 <InlineEquation ID="IEq4"> <EquationSource Format="TEX">\(^{\circ }\)</EquationSource> </InlineEquation>C, the 2-bit truncation configuration (<InlineEquation ID="IEq5"> <EquationSource Format="TEX">\(y_i\)</EquationSource> </InlineEquation> = 2) delivers 23–38% power and area savings over a conventional all-p 6T SRAM baseline, maintains PSNR <InlineEquation ID="IEq6"> <EquationSource Format="TEX">\(\ge\)</EquationSource> </InlineEquation> 30 dB and SSIM = 0.91, and achieves 95.6% classification accuracy on the HAM10000 skin-lesion dataset – within 0.3 percentage points of lossless storage. Leakage power reaches 0.05 nW per cell, with 1.2 pJ/bit energy efficiency confirmed across 10,000-point Monte Carlo parametric variations. To our knowledge, TRUNC-O-SRAM is the first flexible OTFT SRAM primitive combining deterministic bit truncation with perceptual quality feedback for portable medical edge applications.</p>

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TRUNC-O-SRAM : modeling and simulation characteristics of TRUNCated p+ doped OTFT based 8 T SRAM for high speed, dual data and efficient detection of skin cancer from Images

  • 期刊论文

  • 发表日期：

    2026年8月3日

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  • Surbhi Bharti,
  • Ashwni Kumar

摘要

Portable skin-cancer screening wearables demand memory subsystems that are simultaneously energy-efficient, mechanically compliant, and quality-adaptive, requirements unmet by conventional rigid silicon SRAM. This work introduces TRUNC-O-SRAM, an all-p-type Organic Thin-Film Transistor (pOTFT) 8T Static Random-Access Memory (SRAM) designed for flexible substrate deployment, built on a Dual-Split Bottom-Gate Bottom-Contact (DS-BGBC) topology with p+ pentacene channel doping on a L \(a_{0.648}\) N \(b_{(0.352)}O_y\) gate dielectric. Task-aware hierarchical word encoding stores higher-order luminance and lesion-critical bits in stable, read-decoupled 8T cells while selectively truncating lower-order bits, enabling PSNR/SSIM guided in memory precision scaling without perceptual degradation. At 0.5 \(V_{DD}\) and 27 \(^{\circ }\) C, the 2-bit truncation configuration ( \(y_i\) = 2) delivers 23–38% power and area savings over a conventional all-p 6T SRAM baseline, maintains PSNR \(\ge\) 30 dB and SSIM = 0.91, and achieves 95.6% classification accuracy on the HAM10000 skin-lesion dataset – within 0.3 percentage points of lossless storage. Leakage power reaches 0.05 nW per cell, with 1.2 pJ/bit energy efficiency confirmed across 10,000-point Monte Carlo parametric variations. To our knowledge, TRUNC-O-SRAM is the first flexible OTFT SRAM primitive combining deterministic bit truncation with perceptual quality feedback for portable medical edge applications.