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<p>This research proposes a Germanium-source-based Double Gate Tunnel Field-Effect Transistor (DGTFET) for biosensing applications, incorporating a nanocavity above the gate region for effective biomolecule detection. The hetero-material DGTFET architecture utilizes materials such as germanium and silicon to enhance band-to-band tunneling efficiency, reduce threshold voltage, and improve on-state current (Ion) through bandgap engineering across different gate regions. The sensing mechanism is based on variations in the drain current (Id) of an optimized germanium-source DGTFET, which is strongly influenced by the dielectric constant of immobilized biomolecules within the cavity. In the proposed design, the cavity dimensions range from 5–10 nm in length and 3–5 nm in width, allowing the accommodation of different analytes such as Keratin, APTES, and Biotin. Biomolecules with higher dielectric constants enhance the electrostatic coupling between the gate and channel, leading to an increase in the on-current and thereby improving the sensitivity of the device. However, as the cavity length increases, the effective capacitance decreases, resulting in a slight reduction in the drain current (Id).Furthermore, the impact of device scaling on the DGTFET performance is systematically analyzed with respect to the Si₁₋ₓGeₓ heterostructure model at the source and gate regions, along with variations in gate length, oxide thickness, and pocket thickness, under different doping concentrations (cm⁻³) across all regions. The scaling of pocket thickness in the channel region, combined with the incorporation of germanium at the source with optimized doping concentration, significantly enhances both voltage sensitivity and current sensitivity. Comparative analysis indicates that the proposed DGTFET biosensor demonstrates superior voltage sensitivity, improved subthreshold characteristics, enhanced carrier transport, optimized electrostatic control, and better device performance compared to previously reported Double Gate TFET devices in the literature.</p>

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Development of a high-sensitivity Ge-source DGTFET biosensor

  • 期刊论文

  • 发表日期：

    2026年3月17日

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  • Anil Kumar,
  • Sandeep S. Gill,
  • Kanika Sharma

摘要

This research proposes a Germanium-source-based Double Gate Tunnel Field-Effect Transistor (DGTFET) for biosensing applications, incorporating a nanocavity above the gate region for effective biomolecule detection. The hetero-material DGTFET architecture utilizes materials such as germanium and silicon to enhance band-to-band tunneling efficiency, reduce threshold voltage, and improve on-state current (Ion) through bandgap engineering across different gate regions. The sensing mechanism is based on variations in the drain current (Id) of an optimized germanium-source DGTFET, which is strongly influenced by the dielectric constant of immobilized biomolecules within the cavity. In the proposed design, the cavity dimensions range from 5–10 nm in length and 3–5 nm in width, allowing the accommodation of different analytes such as Keratin, APTES, and Biotin. Biomolecules with higher dielectric constants enhance the electrostatic coupling between the gate and channel, leading to an increase in the on-current and thereby improving the sensitivity of the device. However, as the cavity length increases, the effective capacitance decreases, resulting in a slight reduction in the drain current (Id).Furthermore, the impact of device scaling on the DGTFET performance is systematically analyzed with respect to the Si₁₋ₓGeₓ heterostructure model at the source and gate regions, along with variations in gate length, oxide thickness, and pocket thickness, under different doping concentrations (cm⁻³) across all regions. The scaling of pocket thickness in the channel region, combined with the incorporation of germanium at the source with optimized doping concentration, significantly enhances both voltage sensitivity and current sensitivity. Comparative analysis indicates that the proposed DGTFET biosensor demonstrates superior voltage sensitivity, improved subthreshold characteristics, enhanced carrier transport, optimized electrostatic control, and better device performance compared to previously reported Double Gate TFET devices in the literature.