Study and analysis of memristor for analog and digital design
摘要
To fulfill the demands of the expanding IoT industry, new nonvolatile memories with increased speed, density, and reduced power consumption are required. Nonvolatile memories using memristor device has demonstrated excellent performance in memory applications. These memories have an advantage over traditional CMOS memories as they can be scaled to the nanoscale range. Additionally, the memory circuits designed using memristor offer high speed and consumes less power. Memristor devices are compatible with today’s mostly used CMOS and CNTFET technology, however integration at the device level is still challenging due to the unavailability of mature models for memristor. This study examines the fundamental working of a memristor along with its behaviour, characteristic equations, and fingerprints. Different memristor models are examined and contrasted along with its applications spanning all domains. Furthermore, a comprehensive review of various window functions used in memristor modeling is presented to highlight their impact on device behaviour and simulation accuracy. This review aims to familiarize circuit designers with the behaviour, models, and application areas of memristors. Lastly, a memristor is designed through LTspice using the Joglekar window function which meets the required fingerprints criteria and produces a pinched hysteresis loop at 700 Hz.