RF/Analog performance analysis of LTFET device under ambient temperature variation
摘要
In this reported manuscript an extensive simulated study of LTFET (L-shaped Tunneling-Field-Effect-Transistor) using sentaurus TCAD simulator is presented. The reported LTFET device with 20 nm of channel length exhibits a high ION and low IOFF of 1.08 × 10–4 A/µm and of 1.57 × 10–14 A/µm respectively, with the high ION/IOFF ratio of 1010. The SS (sub-threshold slope) for the device is observed as 25 mV/dec at the room temperature. The range of temperature considered for analyzed the Gaussian traps effect between channel and oxide layer is from 250 K to 350 K. The various device analysis has been performed such as DC & AC analysis, noise analysis and linearity analysis while varying the temperature. The results exhibit the small variation on all electrical parameters on which figure of merits depends with the variation of temperature from 250 K to 350 K. The current and voltage noise spectral density also has been reported for the proposed device with variation of temperature and the change is observed from 2.12 × 10–26 A2/Hz to 2.42 × 10–20 A2/Hz for noise spectral density and from 1.79 × 10–11 V2/Hz to 1.97 × 10− 5 V2/Hz for voltage noise spectral density. The device reliability observation for LTFET device suggested that the small variation in all the device parameters in the temperature range of 250 K to 350 K.