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<p>Nanowire-based technology is the leading candidate for future generations of applications. Nanowires are suitable channel materials because of their high electron mobility, low subthreshold leakage current, and one-dimensional conduction. Ferroelectric materials have been used as the gate oxide in this work, which compares two different band gap materials: Silicon and compound materials like InAs. The ferroelectric material is considered a gate oxide due to its better properties that stifle short channel effects (SCEs) like DIBL and subthreshold leakage. Compound material has a higher I<sub>ON</sub> current than silicon material due to its high mobility and better subthreshold swing (SS) when the gate length varies from 30 to 50&#xa0;nm. Because carriers are effectively mobilised, compound material has 100 times better drive current. By changing the gate/channel length from 30 to 50&#xa0;nm, the device performance metrics, SS, I<sub>ON</sub>/I<sub>OFF</sub> ratio, transconductance, output characteristics, etc., are analysed. This work also calibrates the simulated results using published and experimental studies using Zirconium-doped Hafnium oxide (Zr: HfO<sub>2</sub>) ferroelectric material for a gate length of 30&#xa0;nm.</p>

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Ferroelectric gate oxide design and performance analysis in nanowire MFIS structure using silicon and InAs materials

  • 期刊论文

  • 发表日期：

    2025年11月21日

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  • Avinash Kumar,
  • Balwinder Raj

摘要

Nanowire-based technology is the leading candidate for future generations of applications. Nanowires are suitable channel materials because of their high electron mobility, low subthreshold leakage current, and one-dimensional conduction. Ferroelectric materials have been used as the gate oxide in this work, which compares two different band gap materials: Silicon and compound materials like InAs. The ferroelectric material is considered a gate oxide due to its better properties that stifle short channel effects (SCEs) like DIBL and subthreshold leakage. Compound material has a higher ION current than silicon material due to its high mobility and better subthreshold swing (SS) when the gate length varies from 30 to 50 nm. Because carriers are effectively mobilised, compound material has 100 times better drive current. By changing the gate/channel length from 30 to 50 nm, the device performance metrics, SS, ION/IOFF ratio, transconductance, output characteristics, etc., are analysed. This work also calibrates the simulated results using published and experimental studies using Zirconium-doped Hafnium oxide (Zr: HfO2) ferroelectric material for a gate length of 30 nm.