<p>We examine the electromechanical field and charge redistribution within a flexoelectric semiconductor (FS) nanobeam, accounting for bending, fundamental thickness-shear, and antisymmetric thickness-stretch deformations. The coupled governing equations include microstructure, flexoelectric, and semiconductor effects, highlighting the interplay between mechanical displacement, electric potential, and charge carriers. For applications in flexoelectronic devices, the static bending of a simply supported FS beam induced by uniform pressure and wave propagation in an unbounded FS beam are analytically addressed using the derived framework. The effects of antisymmetric thickness-stretch on mechanical displacements and electron concentration perturbation, as well as size dependence of microstructure and flexoelectric effects, are identified. An interesting finding reveals that wave frequencies of the antisymmetric thickness-stretch mode, as anticipated by the proposed model, are larger compared to those of the model neglecting flexoelectric and semiconductor effects. For the first time, the cutoff frequency of antisymmetric thickness-stretch impacted by the two features is explained mathematically. These findings are beneficial for enhancing the performance of flexoelectronic sensors and electroacoustic devices.</p>