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<p>The development of high-performance cathode interlayers (CILs) with low-lying highest occupied molecular orbital (HOMO) energy levels (<i>E</i><sub>HOMO</sub>), capable of effectively suppressing dark current, is crucial for advancing organic photodetectors (OPDs). Herein, we report the first design of alcohol-soluble n-type conjugated polymers based on the boron-nitrogen coordination bond (B←N) unit, serving as CILs for high-performance OPDs. Benefiting from the strong electron-withdrawing capability of the B←N unit and the acceptor-acceptor (A-A) backbone, the polymer simultaneously achieves an <i>E</i><sub>HOMO</sub> of −5.88 eV and a high electrical conductivity of 1.36×10<sup>−6</sup> S·cm<sup>−1</sup>. An ultralow dark current density of 1.66×10<sup>−9</sup> A·cm<sup>−2</sup> under −1 V bias was achieved in OPDs incorporating this CIL, which is one order of magnitude lower than that of devices with the state-of-the-art CIL, resulting in a specific detectivity (<i>D</i>*) of up to 1.86×10<sup>12</sup> Jones in the near-infrared (NIR) region. To the best of our knowledge, this work represents the first report on B←N-unit-based n-type polymers as CILs for OPDs, providing a novel paradigm for designing next-generation ultra-low-noise optoelectronic devices.</p>

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A Polymer Cathode Interlayer Based on B←N Unit for Suppressed Dark Current in Organic Photodetectors

  • 期刊论文

  • 发表日期：

    2026年5月14日

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  • Yu-Xin Xi,
  • Ke Jia,
  • Jia-Hui Wang,
  • Xu Cao,
  • Si-Hui Deng,
  • Jun-Hui Miao,
  • Xing-Xin Shao,
  • Jun Liu,
  • Li-Xiang Wang

摘要

The development of high-performance cathode interlayers (CILs) with low-lying highest occupied molecular orbital (HOMO) energy levels (EHOMO), capable of effectively suppressing dark current, is crucial for advancing organic photodetectors (OPDs). Herein, we report the first design of alcohol-soluble n-type conjugated polymers based on the boron-nitrogen coordination bond (B←N) unit, serving as CILs for high-performance OPDs. Benefiting from the strong electron-withdrawing capability of the B←N unit and the acceptor-acceptor (A-A) backbone, the polymer simultaneously achieves an EHOMO of −5.88 eV and a high electrical conductivity of 1.36×10−6 S·cm−1. An ultralow dark current density of 1.66×10−9 A·cm−2 under −1 V bias was achieved in OPDs incorporating this CIL, which is one order of magnitude lower than that of devices with the state-of-the-art CIL, resulting in a specific detectivity (D*) of up to 1.86×1012 Jones in the near-infrared (NIR) region. To the best of our knowledge, this work represents the first report on B←N-unit-based n-type polymers as CILs for OPDs, providing a novel paradigm for designing next-generation ultra-low-noise optoelectronic devices.