<p>In this study, molybdenum trioxide (MoO<sub>3</sub>) and graphene oxide (GO) nanocomposite thin films with different GO wight precentages (0.5, 0.25 and 0.05%) was deposed on glass substrates at 300&#xa0;°C using the Pulsed Laser Deposition (PLD) technique with an Nd-Yag laser operating at 532&#xa0;nm. The optical properties of the films were investigated using UV-Visible spectroscopy. The results showed a reduction in the optical energy gap with increasing GO contact, particulary at 0.05 and 0.25 wt% GO, indicating enhanced light absorption and possible electronic interaction between MoO<sub>3</sub> and GO. Structural characterization by X-ray diffraction (XRD) confirmed the formation of highly crystalline orthorhombic α-MoO₃ thin films. Variations in peak intensity and crystallite size were observed after GO incorporation, suggesting changes in the structural properties of the films. The crystallite size was estimated using the Scherrer equation, and the results indicated improved crystallinity at certain GO concentration. Field Emission Scanning Electron Microscopy (FE-SEM) analysis revealed relatively uniform particle distribution and improved surface homogeneity after GO addition. The electrical properties were evaluated using Hall efect measurements, which showed an increase in electrical conductivity 2.107 × 10<sup>− 6</sup> to 2.944 × 10<sup>− 4</sup> (Ω.cm)<sup>−1</sup>and carrier mobility from 1.122 × 10 to 1.723 × 10<sup>3</sup> cm<sup>2</sup>/V.s after the incorporation of 0.25% GO. These enhancement may be attributed to improved charge transport pathways and modifications in the microstructure of the deposited thin films.</p>

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Pulsed laser deposition of MoO₃:GO nanocomposite thin films with tunable conductivity and enhanced carrier mobility

  • Zahraa K. Hadad,
  • Asama N. Naje

摘要

In this study, molybdenum trioxide (MoO3) and graphene oxide (GO) nanocomposite thin films with different GO wight precentages (0.5, 0.25 and 0.05%) was deposed on glass substrates at 300 °C using the Pulsed Laser Deposition (PLD) technique with an Nd-Yag laser operating at 532 nm. The optical properties of the films were investigated using UV-Visible spectroscopy. The results showed a reduction in the optical energy gap with increasing GO contact, particulary at 0.05 and 0.25 wt% GO, indicating enhanced light absorption and possible electronic interaction between MoO3 and GO. Structural characterization by X-ray diffraction (XRD) confirmed the formation of highly crystalline orthorhombic α-MoO₃ thin films. Variations in peak intensity and crystallite size were observed after GO incorporation, suggesting changes in the structural properties of the films. The crystallite size was estimated using the Scherrer equation, and the results indicated improved crystallinity at certain GO concentration. Field Emission Scanning Electron Microscopy (FE-SEM) analysis revealed relatively uniform particle distribution and improved surface homogeneity after GO addition. The electrical properties were evaluated using Hall efect measurements, which showed an increase in electrical conductivity 2.107 × 10− 6 to 2.944 × 10− 4 (Ω.cm)−1and carrier mobility from 1.122 × 10 to 1.723 × 103 cm2/V.s after the incorporation of 0.25% GO. These enhancement may be attributed to improved charge transport pathways and modifications in the microstructure of the deposited thin films.