Tuning optoelectronic properties in BaNaH3X (X = Ni, Pd, Pt) perovskite hydrides: a DFT-based analysis
摘要
Perovskite hydrides are promising candidates for optoelectronic and hydrogen-related technologies, where B-site substitution offers an effective route to tune functional properties. We investigate BaNaH3X (X = Ni, Pd, Pt) to clarify how moving down Group 10 modifies structure–property relationships relevant to light harvesting and charge transport. All three compounds are predicted to be stable in the hexagonal P6₃/mmc phase with systematic lattice expansion from Ni to Pt. Hybrid-functional (HSE06) calculations show an indirect band gap of 1.43 eV for BaNaH3Ni and wider gaps of 2.51 eV and 2.43 eV for BaNaH3Pd and BaNaH3Pt, respectively, accompanied by broader band dispersion, lower carrier effective masses, and higher estimated mobilities. The calculated optical response reveals strong visible–UV absorption, large refractive indices, energy-loss peaks near 11–12 eV, and low reflectivity over the solar-relevant range, identifying BaNaH3Ni as a high-index hydride and BaNaH3Pd/Pt as attractive candidates for UV/visible optoelectronic applications.
MethodsFirst-principles density-functional theory (DFT) calculations were carried out using CASTEP. Structural optimization and ground-state properties employed GGA-PBE with OTFG norm-conserving pseudopotentials, a 500 eV plane-wave cutoff, and a Monkhorst–Pack 6 × 6 × 6 k-point mesh. Band gaps were refined using the HSE06 hybrid functional. Carrier effective masses were extracted from the converged band structures, and frequency-dependent dielectric functions and derived optical quantities were computed within the independent-particle approximation for the optimized geometries.