<p>We study the processes of persistent nondissipative carrier transport in silicon nanostructures containing the dipole boron centers with the negative correlation energy (negative-U). Recording electroluminescence spectra caused by the multiple Andreev reflection (MAR) under the gate voltage conditions stimulating MAR spin-flip transitions between chains of the dipole negative-U boron centers allows to study the stability of nondissipative transport and use MAR to develop new approaches to multimode ODMR measured by the electroluminescence spectra. Spin-dependent transitions of single carriers between chains of the negative-U dipole centers are also revealed by changes in the residual magnetic field because of the Overhauser effect that results from the hyperfine interactions with the ²⁹Si nuclei of the silicon lattice. To achieve this, the electromagnetic induction method is used to study the interrelationship between the influence of the negative-U correlation gap and the residual magnetic field on the MAR characteristics.</p>