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<p>Optically active spin centers in the solid-state matrices exhibit unique properties which make them promising objects for the reliable and scalable quantum technologies. Vacancy-related defects in the technologically mature silicon carbide (SiC) demonstrate optical emission in the near-infrared spectral range, providing low-loss channels for quantum communication networks. Nitrogen incorporation into SiC crystal leads to the formation of a spin center with an intrinsic nuclear spin <i>I</i> = 1. In the present work, electron paramagnetic resonance and electron–nuclear double resonance spectroscopy are employed to study nitrogen donors (<i>S</i> = 1/2) and negatively charged nitrogen-vacancy (NV⁻) centers (<i>S</i> = 1) at the quasicubic <i>k</i><sub>1</sub><i>k</i><sub>2</sub> position of the 6<i>H</i>-SiC crystal. Electron–nuclear interactions are investigated in both frequency ranges (9.6&#xa0;GHz – X-band and 94&#xa0;GHz – W-band) of the spectrometer in conditions of «strong» (<i>A</i>, <i>C</i><sub>q</sub> &gt; <i>ν</i><sub>L</sub> = 1&#xa0;MHz, X-band) and «weak» coupling (<i>A</i>, <i>C</i><sub>q</sub> &lt; <i>ν</i><sub>L</sub> ≈&#xa0;10&#xa0;MHz, W-band). Values of the hyperfine and quadrupole interaction tensors of the defect spin Hamiltonian are determined, reflecting the specific features of spin density distribution within the elementary unit cell. A substantial difference between the quadrupole coupling constants of the nitrogen donor (<i>C</i><sub>q</sub> ≤ 10&#xa0;kHz) and the NV⁻<sub><i>k</i>1<i>k</i>2</sub> center (<i>C</i><sub>q</sub> = 2.43&#xa0;MHz) suggests a dominant influence of the silicon vacancy V<sub>Si</sub> on the formation of the electric field gradient <i>V</i><sub>zz</sub> at the <sup>14</sup>N nucleus. The obtained results concerning the local nuclear environment expand the current understanding of the properties of NV centers occupying structurally inequivalent positions in the 6<i>H</i>-SiC crystal lattice.</p>

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On-site Nuclear Environment of the N Donors and NVk1k2 Centers in 6H-SiC

  • 期刊论文

  • 发表日期：

    2026年7月5日

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  • Yu. E. Ermakova,
  • E. V. Dmitrieva,
  • I. N. Gracheva,
  • M. A. Sadovnikova,
  • G. V. Mamin,
  • E. N. Mokhov,
  • M. R. Gafurov,
  • F. F. Murzakhanov

摘要

Optically active spin centers in the solid-state matrices exhibit unique properties which make them promising objects for the reliable and scalable quantum technologies. Vacancy-related defects in the technologically mature silicon carbide (SiC) demonstrate optical emission in the near-infrared spectral range, providing low-loss channels for quantum communication networks. Nitrogen incorporation into SiC crystal leads to the formation of a spin center with an intrinsic nuclear spin I = 1. In the present work, electron paramagnetic resonance and electron–nuclear double resonance spectroscopy are employed to study nitrogen donors (S = 1/2) and negatively charged nitrogen-vacancy (NV⁻) centers (S = 1) at the quasicubic k1k2 position of the 6H-SiC crystal. Electron–nuclear interactions are investigated in both frequency ranges (9.6 GHz – X-band and 94 GHz – W-band) of the spectrometer in conditions of «strong» (A, Cq > νL = 1 MHz, X-band) and «weak» coupling (A, Cq < νL ≈ 10 MHz, W-band). Values of the hyperfine and quadrupole interaction tensors of the defect spin Hamiltonian are determined, reflecting the specific features of spin density distribution within the elementary unit cell. A substantial difference between the quadrupole coupling constants of the nitrogen donor (Cq ≤ 10 kHz) and the NV⁻k1k2 center (Cq = 2.43 MHz) suggests a dominant influence of the silicon vacancy VSi on the formation of the electric field gradient Vzz at the 14N nucleus. The obtained results concerning the local nuclear environment expand the current understanding of the properties of NV centers occupying structurally inequivalent positions in the 6H-SiC crystal lattice.