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<p>Due to the coupling between piezoelectric and semiconducting effects, the piezoelectric semiconductor (PS) PN junction enables mechanical modulation of carrier transport. However, their current–voltage (<i>I</i>–<i>V</i>) characteristics in shell structures remain insufficiently explored under nonlinear multiphysical coupling. To address this issue, this study analyzes the multiphysics coupling behavior of PS PN junction thin-film structures and its influence on the <i>I</i>–<i>V</i> characteristics based on the nonlinear drift–diffusion (NLDD) model. The governing equations describing the nonlinear thermo-electromechanical interaction are derived using the principle of virtual work, charge conservation, and heat conduction. An iterative method combined with the generalized differential quadrature method (GDQM) is employed to solve the nonlinear system, and the accuracy is validated against finite element results. The results indicate that tensile loading can modulate the <i>I</i>–<i>V</i> characteristics of PS PN junction thin-film shells, showing an approximately linear trend within the considered loading range, whereas the influence of temperature appears relatively weak, which can be attributed to the competing effects of multiple temperature-dependent factors. These results may provide theoretical reference for the analysis and design of PS PN junction devices operating under complex multiphysical environments.</p>

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Nonlinear thermo-electromechanical interaction in piezoelectric semiconductor PN junction shell structures

  • 期刊论文

  • 发表日期：

    2026年2月18日

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  • Tiqing Wang,
  • Feng Zhu,
  • Peng Li,
  • Zelin Xu,
  • Tingfeng Ma,
  • Iren Kuznetsova,
  • Zhenghua Qian

摘要

Due to the coupling between piezoelectric and semiconducting effects, the piezoelectric semiconductor (PS) PN junction enables mechanical modulation of carrier transport. However, their current–voltage (I–V) characteristics in shell structures remain insufficiently explored under nonlinear multiphysical coupling. To address this issue, this study analyzes the multiphysics coupling behavior of PS PN junction thin-film structures and its influence on the I–V characteristics based on the nonlinear drift–diffusion (NLDD) model. The governing equations describing the nonlinear thermo-electromechanical interaction are derived using the principle of virtual work, charge conservation, and heat conduction. An iterative method combined with the generalized differential quadrature method (GDQM) is employed to solve the nonlinear system, and the accuracy is validated against finite element results. The results indicate that tensile loading can modulate the I–V characteristics of PS PN junction thin-film shells, showing an approximately linear trend within the considered loading range, whereas the influence of temperature appears relatively weak, which can be attributed to the competing effects of multiple temperature-dependent factors. These results may provide theoretical reference for the analysis and design of PS PN junction devices operating under complex multiphysical environments.