<p>We study thermally induced redistributions of free carriers in thermopiezoelectric semiconductor plates with flexoelectric effects. A new plate model is developed by integrating the thermopiezoelectric semiconductor theory with flexoelectric effects, Kirchhoff plate theory, and the principle of virtual work applicable to semiconductors. This model comprehensively accounts for the effects of piezoelectric, flexoelectric, strain gradient, temperature and semiconducting, presenting the boundary value problem that includes the field equations and all relevant boundary conditions. To validate the efficacy of the new model, we analytically solve for electric potential and concentration perturbations in a simply supported plate under temperature changes in in-plane and transverse directions. The results reveal that varying the modes, amplitudes, and directions of the prescribed temperature fields enables tuning of the electric potential distribution and the redistribution of free carriers. Moreover, the electric potential and free carriers concentration perturbations calculated with the current model are found to be lower than those of the piezoelectric semiconductor plate under in-plane temperature change. Notably, the transverse electric potential is particularly affected by temperature changes in in-plane and transverse directions. This work provides novel guidance for the design of semiconductor devices aimed at thermal applications.</p>