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<p>This study reports the synthesis, structural characterization, optical and electrical properties of (Cu<sub>2-x</sub>Ag<sub>x</sub>)ZnSnSe<sub>4</sub> solid solutions. Powder X-ray diffraction patterns and Rietveld refinement results were consistent with phases belonging to the <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="706_2025_3328_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="43" /> </InlineMediaObject> <EquationSource Format="TEX">\(I\overline{4 }2m\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi>I</mi> <mover> <mn>4</mn> <mo>¯</mo> </mover> <mn>2</mn> <mi>m</mi> </mrow> </math></EquationSource> </InlineEquation> space group (stannite-type). The Raman spectra peaks were fitted, displaying the main A<sub>2</sub> vibrational mode at about ~ 187&#xa0;cm<sup>−1</sup>. FWHM and intensity of the Raman peaks reflect the high crystallinity. Cu<sub>1.90</sub>Ag<sub>0.10</sub>ZnSnSe<sub>4</sub> and Cu<sub>1.80</sub>Ag<sub>0.20</sub>ZnSnSe<sub>4</sub> exhibit typical semiconductor p-type behavior with a carrier concentration of ~ + 10<sup>19</sup>&#xa0;cm<sup>−3</sup>. The optical band gaps calculated based on the UV–Vis-NIR spectra were <i>E</i><sub><i>g</i></sub> ~ 0.6–0.8&#xa0;eV.</p> Graphical abstract <p></p>

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Effects of silver chemical substitution on the structural and physical properties of Cu2-xAgxZnSnSe4 selenides

  • 期刊论文

  • 发表日期：

    2025年6月17日

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  • Catalina Cortés,
  • Anibal Osorio,
  • Daniela Delgado,
  • Paulina Valencia-Gálvez,
  • Antonio Galdamez,
  • Silvana Moris

摘要

This study reports the synthesis, structural characterization, optical and electrical properties of (Cu2-xAgx)ZnSnSe4 solid solutions. Powder X-ray diffraction patterns and Rietveld refinement results were consistent with phases belonging to the \(I\overline{4 }2m\) I 4 ¯ 2 m space group (stannite-type). The Raman spectra peaks were fitted, displaying the main A2 vibrational mode at about ~ 187 cm−1. FWHM and intensity of the Raman peaks reflect the high crystallinity. Cu1.90Ag0.10ZnSnSe4 and Cu1.80Ag0.20ZnSnSe4 exhibit typical semiconductor p-type behavior with a carrier concentration of ~ + 1019 cm−3. The optical band gaps calculated based on the UV–Vis-NIR spectra were Eg ~ 0.6–0.8 eV.

Graphical abstract