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<p>The interface carrier transport characteristics is crucial for determining the performance of metal oxide semiconductor (MOS) gas sensors. Herein, a layered structure of Ag@SnO<sub>2</sub> was fabricated by regulating the carrier transport characteristics at the material interface. It was found that the sample 3AgSn exhibits superior carrier transport capability (carrier density of 6.45 × 10<sup>20</sup> cm<sup>− 3</sup>, carrier mobility of 173.16 cm<sup>2</sup>·V<sup>− 1</sup>·s<sup>− 1</sup>) compared to other samples, with the lowest interfacial charge transfer resistance (41.73 Ω). The sample named&#xa0;3AgSn exhibits an ultra-high response to 50 ppm triethylamine (TEA) at an optimal operating temperature of 173&#xa0;°C, which is 228 times higher than that of SnO<sub>2</sub>. Additionally, it demonstrates excellent selectivity, an ultra-low detection limit (0.067 ppm), and good long-term stability. The enhanced gas-sensing performance is mainly attributed to the synergistic regulation mechanism between oxygen vacancies and Schottky barriers. This research provides a new perspective for the design and performance enhancement of MOSs gas sensors.</p> Graphical abstract <p></p>

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Oxygen vacancy and Schottky junction synergistically regulated Ag@SnO2 interface carrier transport performance for triethylamine gas sensing monitoring

  • 期刊论文

  • 发表日期：

    2025年11月17日

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  • Shaohan Feng,
  • Yang Luo,
  • Jianhua Sun,
  • Yanlin Zhong,
  • Wanting Du,
  • Dankui Liao,
  • Lixia Sun

摘要

The interface carrier transport characteristics is crucial for determining the performance of metal oxide semiconductor (MOS) gas sensors. Herein, a layered structure of Ag@SnO2 was fabricated by regulating the carrier transport characteristics at the material interface. It was found that the sample 3AgSn exhibits superior carrier transport capability (carrier density of 6.45 × 1020 cm− 3, carrier mobility of 173.16 cm2·V− 1·s− 1) compared to other samples, with the lowest interfacial charge transfer resistance (41.73 Ω). The sample named 3AgSn exhibits an ultra-high response to 50 ppm triethylamine (TEA) at an optimal operating temperature of 173 °C, which is 228 times higher than that of SnO2. Additionally, it demonstrates excellent selectivity, an ultra-low detection limit (0.067 ppm), and good long-term stability. The enhanced gas-sensing performance is mainly attributed to the synergistic regulation mechanism between oxygen vacancies and Schottky barriers. This research provides a new perspective for the design and performance enhancement of MOSs gas sensors.

Graphical abstract