Optical field analysis of CdSe based quantum dot LEDs towards fluorescent biosensing applications
摘要
The optical analysis of Quantum Dot-Light Emitting Diode (QLED) based on CdSe is presented in this work using Finite element analysis method. The study investigates how optical confinement and emission performance is impacted by single and double layer CdSe quantum dot (QD). Strong cavity supported optical confinement is indicated by the results, which display a gaussian like spectral response with frequency peaks in the visible region (~ 500–560 nm). A red shift in resonance wavelength results from increasing the thickness of the quantum dot layer, which improves alignment with CdSe emission. Orientation dependent emission is revealed via dipole analysis, alongside the X-oriented dipole which has power density of 1546 W/m2 showing a greater connection to the cavity mode. An improved light extraction efficiency at 530–560 nm is observed at the substrate region. Furthermore, a comparative analysis of several quantum dot materials shows that emission can be adjusted throughout the visible spectrum. The results suggest an approach to optimize QLED performance for optoelectronic applications possibly relevant for biosensing and advanced display technologies.