<p>The increasing demand for power-efficient and high-performance communication systems has driven advancements in radio frequency micro electro mechanical systems (RF MEMS) technology, particularly in bistable lateral switches. These switches offer superior RF characteristics, including minimal insertion loss with excellent isolation and low power operation, making them ideal for redundancy selection where reliable RF signal switching and uninterrupted performance are critical. The mechanical characterization of such a bistable MEMS switch was conducted at IISc, Bangalore. To make the switch operate at RF frequencies and achieve better RF performance, the sidewall coating of coplanar waveguides (CPW) has been done and the simulation has been carried out in high frequency structure simulator (HFSS). To optimize the CPW sidewall coating length (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:{L}_{sm}\)</EquationSource> </InlineEquation>), an artificial neural network (ANN) model was developed. Variations in the sidewall coating length (<InlineEquation ID="IEq2"> <EquationSource Format="TEX">\(\:{L}_{sm}\)</EquationSource> </InlineEquation>), influences the current distribution in the sidewalls and in turn the inductance (L) of the CPW gets modified. In this paper, the RLC (resistor, capacitor, inductor) equivalent circuit model is formulated for the bistable lateral switch. The inductance (<i>L</i>) value obtained for the corresponding optimized CPW sidewall coating length (<InlineEquation ID="IEq3"> <EquationSource Format="TEX">\(\:{L}_{sm}\)</EquationSource> </InlineEquation> ) from the ANN model is used in the RLC model. The influence of inductance (<i>L</i>) on the RF Performance (S₁₁, S₂₁) is observed using advanced design system EM simulator. The simulation results show an isolation below − 70 dB and insertion loss of − 0.47 dB at 6&#xa0;GHz for both STABLE STATEs. The S parameters obtained using RLC model agreed well with results obtained from HFSS simulations.</p>