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<p>The development of a silicon-based volumetric Thermoresistive Microcalorimetric Flow Sensor is presented. The temperature profile of the flow through the channel is analyzed using a one-dimensional mathematical model and validated with computer-aided simulations in COMSOL Multiphysics. The manufacturing process is successfully implemented using a silicon substrate, SiO<sub>2</sub>, and SiN<sub>x</sub> films for thermal isolation from the substrate, P-doped a-Si<sub>x</sub>C<sub>1−x</sub>: H thin film as sensor material, and Titanium as heater and thermometer elements. Experimental results obtained with DI water in Constant Temperature Difference mode further validate the accuracy of the mathematical model. The measured sensor response showed excellent agreement with model predictions, evidenced by a Pearson correlation coefficient of 0.983 for the internal sensor pair. This strong correlation confirms the model’s capability to reliably predict the flow-induced thermal signal. The highest sensitivity of 86.7 mV/µl/min, observed in the internal sensors, is attributed to the high Temperature Coefficient of Resistance of the P-doped a-Si<sub>x</sub>C<sub>1−x</sub>: H film.</p>

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Development of a silicon-based thermal sensor for volumetric flow rate measurements: mathematical model, computer-aided simulations and micro-manufacturing

  • 期刊论文

  • 发表日期：

    2026年6月26日

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  • D. F. Valencia-Grisales,
  • C. Reyes-Betanzo

摘要

The development of a silicon-based volumetric Thermoresistive Microcalorimetric Flow Sensor is presented. The temperature profile of the flow through the channel is analyzed using a one-dimensional mathematical model and validated with computer-aided simulations in COMSOL Multiphysics. The manufacturing process is successfully implemented using a silicon substrate, SiO2, and SiNx films for thermal isolation from the substrate, P-doped a-SixC1−x: H thin film as sensor material, and Titanium as heater and thermometer elements. Experimental results obtained with DI water in Constant Temperature Difference mode further validate the accuracy of the mathematical model. The measured sensor response showed excellent agreement with model predictions, evidenced by a Pearson correlation coefficient of 0.983 for the internal sensor pair. This strong correlation confirms the model’s capability to reliably predict the flow-induced thermal signal. The highest sensitivity of 86.7 mV/µl/min, observed in the internal sensors, is attributed to the high Temperature Coefficient of Resistance of the P-doped a-SixC1−x: H film.